NTE56 NTE ELECTRONICS, NTE56 Datasheet
NTE56
Manufacturer Part Number
NTE56
Description
TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE56.pdf
(2 pages)
Specifications of NTE56
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Collector-Emitter Voltage, V
Collector-Base Voltage, V
Emitter-Base Voltage, V
Collector Current, I
Base Current, I
Collector Power Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Breakdown Voltage V
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Capacitance
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Gain Switch and Pass Regulator
J
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25°C unless otherwise specified)
A
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
(BR)CEO
CE(sat)
I
I
C
h
CBO
EBO
f
FE
OB
T
D
NTE56
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
I
V
I
V
V
C
C
CB
EB
CE
CE
CB
= 25mA
= 2A, I
= 6V
= 100V
= 4V, I
= 12V, I
= 10V, f = 1MHz
Test Conditions
B
C
= 50mA
E
= 0.5A
= -0.2A
Min
500
80
-
-
-
-
-
Typ
15
50
-
-
-
-
-
-55° to +150°C
Max Unit
100
0.5
10
-
-
-
-
+150°C
MHz
100V
μA
μA
25W
pF
V
V
80V
6V
3A
1A
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NTE56 Summary of contents
Page 1
... Emitter Cutoff Current Collector-Emitter Breakdown Voltage V DC Current Gain Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product Capacitance NTE56 Silicon NPN Transistor = +25°C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Isol .665 (16. .512 (13.0) Min .100 (2.54) .165 (4.2) .157 (4.0) E .154 (3.9) .094 (2.4) .110 (2.8) ...