BD139 MULTICOMP, BD139 Datasheet - Page 2
BD139
Manufacturer Part Number
BD139
Description
BIPOLAR TRANSISTOR, NPN, 80V
Manufacturer
MULTICOMP
Datasheet
1.BD139.pdf
(4 pages)
Specifications of BD139
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
1.25W
Dc Collector Current
1.5A
Dc Current Gain Hfe
250
No. Of Pins
3
No. Of Transistors
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BD139
Manufacturer:
FUJI
Quantity:
10 000
Company:
Part Number:
BD139
Manufacturer:
STM
Quantity:
100 000
Part Number:
BD139
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BD139-10
Manufacturer:
CDIL
Quantity:
20 000
Part Number:
BD139-10
Manufacturer:
ST
Quantity:
20 000
Part Number:
BD139-16
Manufacturer:
ON/安森美
Quantity:
20 000
Absolute Maximum Ratings
Ratings (at T
BD139
TO-126 NPN Transistors
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage (Open Base)
Collector Current
Total Power Dissipation upto T
Junction Temperature
Collector-Emitter Saturation Voltage
I
DC Current Gain
I
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage (Open Base)
Emitter-Base Voltage (Open Collector)
Collector Current
Base Current
Total Power Dissipation up to T
Derate above 25°C
Total Power Dissipation up to T
Derate above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance
From Junction to Case
From Junction to Ambient
C
C
= 0.5A, I
= 0.15A; V
B
= 0.05A
CE
a
= 2V
= 25°C unless otherwise specified)
-
-
C
A
C
= 25°C
= 25°C
= 25°C
Symbol
V
Symbol
R
R
V
V
CE (Sat)
V
V
Page 2
V
h
T
P
P
th (j-c)
th (j-a)
CBO
CEO
CBO
CEO
EBO
I
T
I
I
T
FE
stg
C
C
tot
B
tot
j
j
Maximum
Maximum
Maximum
Minimum
-
-
-
-
-
-65 to +150
BD139
BD139
12.5
1.25
12.5
100
150
250
100
100
150
100
1.5
0.5
5.0
1.5
0.5
80
40
80
10
10
09/05/08 V1.1
mW/°C
°C/W
Unit
Unit
°C
°C
W
W
V
A
V
V
A
-