NTE278 NTE ELECTRONICS, NTE278 Datasheet
NTE278
Manufacturer Part Number
NTE278
Description
RF TRANSISTOR, NPN, 20V, 1.2GHZ
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE278.pdf
(2 pages)
Specifications of NTE278
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
20V
Transition Frequency Typ Ft
1.2GHz
Power Dissipation Pd
2.5W
Dc Collector Current
400mA
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
Features:
D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
D High Current–Gain Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Continuous Base Current, I
Total Device Dissipation (T
Storage Temperature Range, T
Note 1. Total Device Dissipation at T
Electrical Characteristics: (T
Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
EBO
CBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
= +75 C, Note 1), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
V
V
= +25 C unless otherwise specified)
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
CER(sus)
I
I
I
Broadband RF Amp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
CEX
EBO
A
= +25 C is 1 Watt.
I
I
V
V
V
V
C
C
CE
CE
CE
BE
NTE278
= 5mA, I
= 5mA, R
T
= 15V, V
= 15V, I
= 35V, V
= 3V, I
= 1200MHz Min @ I
D
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
B
BE
B
BE
= 0
= 0
BE
= 0
= 10 , Note 2
= –1.5V, T
= –1.5V
C
= +150 C
C
= 50mA
Min
20
40
–
–
–
–
Typ
–
–
–
–
–
–
–65 to +200 C
Max
100
20
–
–
5
5
20mW/ C
400mA
400mA
Unit
2.5W
mA
mA
V
V
20V
40V
A
A
3V
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NTE278 Summary of contents
Page 1
... Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features: D Low Noise Figure 3.0dB Typ @ f = 200MHz D High Current–Gain Bandwidth Product: f Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Dynamic Characteristics Current–Gain Bandwidth Product Collector–Base Capacitance Noise Figure Functional Test Common–Emitter Amplifier Voltage Gain Power Input Emitter = +25 C unless otherwise specified) C Symbol Test Conditions h I ...