SQM40N10-30-GE3 Vishay, SQM40N10-30-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQM40N10-30-GE3
• Description: MOSFET,N CH,W DIODE,100V,40A,TO-263
• Manufacturer: Vishay

Specifications of SQM40N10-30-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.023ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 107W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

SQM40N10-30
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.12
0.09
0.06
0.03
2.5
2.1
1.7
1.3
0.9
0.5
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
- 25
D
= 15 A
2
V
0
GS
T
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
75
V
GS
6
= 10 V
100
130
124
118
112
106
100
A
Drain Source Breakdown vs. Junction Temperature
- 50
= 25 °C, unless otherwise noted)
T
T
J
125
J
= 150 °C
= 25 °C
8
I
- 25
D
= 10 mA
150
0
T
175
10
J
- Junction Temperature (°C)
25
50
75
100
0.001
0.01
- 0.2
- 0.7
- 1.2
- 1.7
100
0.1
10
0.8
0.3
1
125
- 50
0
150
- 25
Source Drain Diode Forward Voltage
0.2
T
175
V
J
0
SD
= 150 °C
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
25
T
J
- Temperature (°C)
50
0.6
S10-2103-Rev. B, 27-Sep-10
75
Document Number: 64716
I
T
D
J
0.8
= 250 μA
100
= 25 °C
125
I
D
1.0
= 5 mA
150
1.2
175