VS-GB75YF120UT Vishay, VS-GB75YF120UT Datasheet

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VS-GB75YF120UT

Manufacturer Part Number
VS-GB75YF120UT
Description
IGBT,4 PACK,1200V,75A,ECONO2
Manufacturer
Vishay
Datasheet

Specifications of VS-GB75YF120UT

Module Configuration
Quad
Transistor Polarity
NPN
Dc Collector Current
100A
Collector Emitter Voltage Vces
3.8V
Power Dissipation Max
480W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case
RoHS Compliant
Transistor Case Style
Module
No. Of Pins
33
Rohs Compliant
Yes
Document Number: 93172
Revision: 13-Jan-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Maximum power dissipation (IGBT)
Maximum operating junction temperature
Storage temperature range
Isolation voltage
I
V
C
CE(on)
at T
V
C
CES
(typical)
= 67 °C
ECONO2 4PACK
IGBT Fourpack Module, 75 A
For technical questions, contact:
1200 V
3.4 V
75 A
SYMBOL
V
V
T
V
I
I
I
P
CM
T
ISOL
CES
I
LM
FM
I
Stg
GE
C
F
D
J
T
T
T
T
T
T
C
C
C
C
C
C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
TEST CONDITIONS
FEATURES
• Square RBSOA
• HEXFRED
• Positive V
• Copper baseplate
• Low stray inductance design
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
indmodules@vishay.com
HF welding
CE(on)
®
low Q
Vishay High Power Products
temperature coefficient
rr
, low switching energy
AC 2500 (MIN)
- 40 to + 125
MAX.
1200
± 20
100
200
200
150
480
270
150
67
60
40
GB75YF120UT
www.vishay.com
UNITS
°C
W
A
V
V
V
1

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VS-GB75YF120UT Summary of contents

Page 1

... ° ° ° Stg V ISOL For technical questions, contact: indmodules@vishay.com GB75YF120UT Vishay High Power Products ® low Q , low switching energy rr temperature coefficient CE(on) MAX. UNITS 1200 100 67 200 200 60 40 150 ± 20 480 270 150 - 125 AC 2500 (MIN) www.vishay.com ° ...

Page 2

... GB75YF120UT Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Threshold voltage temperature coefficient Zero gate voltage collector current Diode forward voltage drop Gate to emitter leakage current SWITCHING CHARACTERISTICS ( °C unless otherwise noted) ...

Page 3

... I (A) C Fig Maximum DC Collector Current vs. Case Temperature 500 400 300 200 100 100 120 140 160 T (°C) C Fig Power Dissipation vs. Case Temperature Document Number: 93172 Revision: 13-Jan-10 IGBT Fourpack Module TEST CONDITIONS 100 ° °C/50 °C J SYMBOL MIN. R (IGBT) - thJC R (DIODE) ...

Page 4

... For technical questions, contact: indmodules@vishay.com 75A 50A 25A (V) GE Fig Typical V vs ° 75A 50A 25A (V) GE Fig Typical V vs 125 °C J 300 25°C 250 125°C 200 150 100 (V) GE Fig Typical Transfer Characteristics 500 μ Document Number: 93172 Revision: 13-Jan- ...

Page 5

... For technical questions, contact: indmodules@vishay.com GB75YF120UT Vishay High Power Products 1000 td OFF 100 (A) C Fig Typical Switching Time vs Ω 600 8000 E ON 6000 E OFF 4000 2000 (Ω) G Fig Typical Energy Loss vs 600 1000 td OFF 100 (Ω) G Fig Typical Switching Time vs 600 www.vishay.com ...

Page 6

... Rectangular Pulse Duration (sec) 1 For technical questions, contact: indmodules@vishay.com 100 (Ω) G Fig Typical Diode I vs 125 ° typical value 100 200 300 400 500 600 Q , Total Gate Charge (nC) G Fig Typical Gate Charge vs 5 600 μ Document Number: 93172 Revision: 13-Jan-10 50 700 ...

Page 7

... Document Number: 93172 Revision: 13-Jan-10 IGBT Fourpack Module 1000 D.U. Fig. C.T.5 - Resistive Load Circuit For technical questions, contact: indmodules@vishay.com GB75YF120UT Vishay High Power Products Driver D + 900 D.U.T. Fig. C.T.3 - S.C. SOA Circuit Diode clamp/ D.U. D.U.T Driver R g Fig. C.T.4 - Switching Loss Circuit ...

Page 8

... GB75YF120UT Vishay High Power Products ORDERING INFORMATION TABLE G Device code CIRCUIT CONFIGURATION 41 G1 Aux1 Aux2 38 Dimensions www.vishay.com 8 IGBT Fourpack Module 120 Insulated gate bipolar transistor (IGBT IGBT Generation 5 - Current rating ( Circuit configuration (Y = Fourpack) - Package indicator (F = ECONO2) - Voltage rating (120 = 1200 V) - Speed/type (U = Ultrafast IGBT) ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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