VS-GB75YF120UT Vishay, VS-GB75YF120UT Datasheet - Page 5

• Manufacturer Part Number: VS-GB75YF120UT
• Description: IGBT,4 PACK,1200V,75A,ECONO2
• Manufacturer: Vishay

Specifications of VS-GB75YF120UT

• Module Configuration: Quad
• Transistor Polarity: NPN
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 3.8V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case: RoHS Compliant
• Transistor Case Style: Module
• No. Of Pins: 33
• Rohs Compliant: Yes

Document Number: 93172
Revision: 13-Jan-10
T
J
= 125 °C; L = 500 μH; V
Fig. 11 - Typical Zero Gate Voltage Collector Current
0.001
0.01
2500
2000
1500
1000
5.5
4.5
3.5
2.5
0.1
5
4
3
2
1
400
0
30
Fig. 12 - Typical Threshold Voltage
Fig. 13 - Typical Energy Loss vs. I
0.2
40
T J = 125°C
T J = 25°C
600
E ON
0.4
50
V
I
CC
C
I
CES
C
800
(mA)
T J = 25°C
= 600 V, R
(A)
E OFF
(V)
T J = 125°C
0.6
60
For technical questions, contact:
1000
g
IGBT Fourpack Module, 75 A
0.8
70
= 5 Ω; V
C
1200
80
1
GE
= 15 V
[e-mail]
T
T
T
J
J
J
= 125 °C; L = 500 μH; V
= 125 °C; L = 500 μH; V
= 125 °C; L = 500 μH; V
14000
12000
10000
10000
8000
6000
4000
2000
1000
1000
100
100
10
10
0
20
0
0
Fig. 16 - Typical Switching Time vs. R
Fig. 14 - Typical Switching Time vs. I
Fig. 15 - Typical Energy Loss vs. R
Vishay High Power Products
td OFF
30
10
10
t R
40
E ON
t R
20
t F
20
td OFF
CC
CC
CC
R
R
I
C
G
G
t F
= 600 V, I
= 600 V, R
50
= 600 V, I
(A)
(Ω)
(Ω)
E OFF
td ON
GB75YF120UT
30
30
60
C
C
g
40
= 75 A; V
= 75 A; V
40
td ON
= 5 Ω; V
70
www.vishay.com
g
C
g
50
50
80
GE
GE
GE
= 15 V
= 15 V
= 15 V
5