ATF-50189-TR1 Avago Technologies US Inc., ATF-50189-TR1 Datasheet - Page 3

• Manufacturer Part Number: ATF-50189-TR1
• Description: TRANSISTOR,HEMT,N-CHAN,7V V(BR)DSS,SOT-89
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-50189-TR1

• Rohs Compliant: YES
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15.5dB
• Voltage - Rated: 7V
• Current Rating: 1A
• Noise Figure: 1.1dB
• Current - Test: 280mA
• Voltage - Test: 4.5V
• Power - Output: 29dBm
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3
Input
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE
and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and
VSWR. Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts
Notes:
1. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
2. Measurements are made on production test board, which represents a trade-off between optimal
to this product may have nominal values anywhere between the upper and lower limits.
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
Figure 2. OIP3 @ 2 GHz, 4.5V/280 mA.
LSL = 43.0, Nominal = 45.4
Figure 4. Gain @ 2 GHz, 4.5V/200 mA.
LSL = 14.0, Nominal = 15.5, USL = 17.0
150
120
300
250
200
150
100
90
60
30
50
0
0
43
14
Stdev=0.37
Stdev=0.16
14.5
Γ_ang=-136.6°
44
Γ_mag=0.80
(0.9 dB loss)
–3 Std
Matching
–3 Std
15
Circuit
Input
OIP3 (dBm)
GAIN (dB)
15.5
45
+3 Std
16
46
+3 Std
16.5
DUT
47
17
[1,2]
Figure 3. P1dB @ 2 GHz, 4.5V/280 mA.
LSL = 27.0, Nominal = 29.0
Figure 5. PAE at P1dB @ 2 GHz, 4.5V/200 mA.
LSL = 45.0, Nominal = 62.0
180
150
120
150
120
90
60
30
90
60
30
0
0
28
54
Stdev=0.20
Stdev=1.94
Γ_ang=-163°
Γ_mag=0.62
(0.9 dB loss)
Matching
–3 Std
Output
Circuit
–3 Std
28.5
58
P1dB (dBm)
PAE (%)
29
62
Output
29.5
66
+3 Std
+3 Std
30
70