IRFZ44 Vishay, IRFZ44 Datasheet - Page 2

• Manufacturer Part Number: IRFZ44
• Description: TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,50A I(D),TO-220AB
• Manufacturer: Vishay

Specifications of IRFZ44

• Rohs Compliant: NO
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFZ44, SiHFZ44
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
This datasheet is subject to change without notice.
SYMBOL
ΔV
R
V
C
t
t
R
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
GSS
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
L
L
SM
t
I
t
t
on
thCS
thJC
DS
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
R
T
GS
GS
V
J
g
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
= 25 °C, I
= 9.1 Ω, R
Reference to 25 °C, I
= 10 V
= 10 V
J
= 25 °C, I
= 48 V, V
V
V
f = 1.0 MHz, see fig. 5
V
V
TYP.
V
TEST CONDITIONS
0.50
DS
GS
DS
DD
DS
-
-
= V
= 0 V, I
V
= 60 V, V
= 30 V, I
= 25 V, I
F
V
GS
V
D
= 51 A, dI/dt = 100 A/μs
DS
GS
S
GS
GS
= 0.55 Ω, see fig. 10
I
= 51 A, V
= ± 20 V
D
= 25 V,
, I
= 0 V, T
= 0 V,
see fig. 6 and 13
= 51 A, V
D
D
D
= 250 μA
D
= 250 μA
GS
I
D
= 51 A,
= 31 A
= 31 A
= 0 V
D
J
GS
= 1 mA
= 125 °C
DS
G
G
= 0 V
= 48 V,
b
b
MAX.
D
S
b
S
D
1.0
62
b
-
MIN.
2.0
60
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0517-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91291
0.060
TYP.
1900
0.53
920
170
110
120
4.5
7.5
14
45
92
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.028
0.80
250
200
180
4.0
2.5
S
25
67
18
25
50
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
nC
pF
ns
ns
Ω
V
V
S
A
V