NTE51 NTE ELECTRONICS, NTE51 Datasheet
NTE51
Manufacturer Part Number
NTE51
Description
TRANSISTOR - NPN HIGH VOLTAGE HIGH SPEED SWITCHING
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE51.pdf
(2 pages)
Specifications of NTE51
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE5174AK
Manufacturer:
KODENSHI
Quantity:
3 000
Description:
The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor con-
trols, solenoid/relay drivers and deflection circuits.
Features:
D Reverse Bias SOA with Inductive Loads @ T
D 700V Blocking Capability
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter Base Voltage, V
Collector Current,I
Base Current, I
Emitter Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width = 300 s, Duty Cycle = 2%.
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Derate above 25 C
Derate above 25 C
Parameter
B
E
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
High Voltage, High Speed Switch
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
CEO(sus)
CEV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
Symbol
CEO(sus)
= +25 C unless otherwise Specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
I
I
CEV
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
I
V
V
T
V
c
C
CEV
CEV
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= 10mA, I
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 9V, I
NTE51
= 700V, V
= 700V, V
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100 C
B
Test Conditions
= 0
= 0
BE(off)
BE(off)
= 1.5V,
= 1.5V
L
. . . . . . . . . . . . . . . . . . . . . . .
Min
400
–
–
–
Typ
–65 to +150 C
–65 to +150 C
–
–
–
–
600mW/ C
Max Unit
16mW/ C
1.67 C/W
62.5 C/W
–
1
1
1
+275 C
400V
700V
75W
mA
mA
mA
12A
V
2W
9V
4A
8A
2A
4A
6A
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NTE51 Summary of contents
Page 1
... High Voltage, High Speed Switch Description: The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor con- trols, solenoid/relay drivers and deflection circuits ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Dynamics Characteristics Current Gain–Bandwidth Product Output Capacitance Switching Characteristics (Resistive Load) Delay Time Rise Time Storage Time Fall Time Switching Characteristics (Inductive Load, Clamped) Voltage ...