SI4425DDY-T1-GE3 Vishay, SI4425DDY-T1-GE3 Datasheet

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SI4425DDY-T1-GE3

Manufacturer Part Number
SI4425DDY-T1-GE3
Description
P-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI4425DDY-T1-GE3

Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
8.1mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SOIC
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0098 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4425DDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
SI4425DDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4425DDY-T1-GE3
0
Company:
Part Number:
SI4425DDY-T1-GE3
Quantity:
10 000
Company:
Part Number:
SI4425DDY-T1-GE3
Quantity:
100
Company:
Part Number:
SI4425DDY-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09
Ordering Information: Si4425DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
G
C
S
S
S
= 25 °C.
0.0165 at V
0.0098 at V
1
2
3
4
R
DS(on)
Top View
SO-8
GS
GS
J
(Ω)
= 150 °C)
= 4.5 V
= 10 V
b, d
P-Channel 30-V (D-S) MOSFET
8
7
6
5
D
D
D
D
I
- 19.7
- 15.2
D
(A)
Steady State
a
t ≤ 10 s
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
27 nC
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Load Switches
Definition
- Notebook PCs
- Desktop PCs
Typical
35
18
g
Tested
®
Power MOSFET
- 55 to 150
- 10.4
- 2.1
- 13
2.5
1.6
- 19.7
- 15.7
Limit
± 20
- 4.7
- 30
- 50
5.7
3.6
b, c
b, c
b, c
b, c
b, c
G
P-Channel MOSFET
Maximum
50
22
Vishay Siliconix
Si4425DDY
S
D
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4425DDY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4425DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si4425DDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 64732 S09-0314-Rev. A, 02-Mar- 1.5 2.0 4000 3000 2000 1000 Si4425DDY Vishay Siliconix 2.0 1.5 1 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 ...

Page 4

... Si4425DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 1.9 1 250 µA D 1.3 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4425DDY Vishay Siliconix 125 150 1.8 1.5 1.2 0.9 0.6 0.3 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 125 ...

Page 6

... Si4425DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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