SI4425DDY-T1-GE3 Vishay, SI4425DDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4425DDY-T1-GE3
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4425DDY-T1-GE3

• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 8.1mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0098 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09
8
6
4
2
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
24
20
16
12
8
4
0
0
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.8
1.5
1.2
0.9
0.6
0.3
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4425DDY
100
www.vishay.com
125
150
5