SI4840DY-T1 Vishay, SI4840DY-T1 Datasheet

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SI4840DY-T1

Manufacturer Part Number
SI4840DY-T1
Description
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,10A I(D),SO
Manufacturer
Vishay
Datasheets

Specifications of SI4840DY-T1

Rohs Compliant
NO

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Notes
a.
Document Number: 71188
S-50402—Rev. D, 07-Mar-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy (Single Pulse)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
40
40
(V)
J
ti
Ordering Information: Si4840DY
t A bi
G
S
S
S
J
J
a
a
0.012 @ V
0.009 @ V
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
r
DS(on)
1
2
3
4
a
a
GS
GS
Si4840DY-T1 (with Tape and Reel)
Si4840DY—E3 (Lead (Pb)-Free)
Si4840DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
Top View
(W)
N-Channel 40-V (D-S) MOSFET
= 4.5 V
SO-8
= 10 V
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
14
12
(A)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
AS
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 100% R
10 secs
Typical
2.8
3.1
2.0
14
11
33
65
17
g
Tested
−55 to 150
G
"20
40
50
30
45
N-Channel MOSFET
Steady State
Maximum
Vishay Siliconix
1.56
1.4
1.0
10
40
80
21
D
S
8
Si4840DY
www.vishay.com
Available
Unit
Pb-free
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
A
1

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SI4840DY-T1 Summary of contents

Page 1

... SO Top View Ordering Information: Si4840DY Si4840DY-T1 (with Tape and Reel) Si4840DY—E3 (Lead (Pb)-Free) Si4840DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si4840DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 71188 S-50402—Rev. D, 07-Mar-05 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si4840DY Vishay Siliconix Capacitance C iss C oss 500 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 ...

Page 4

... Si4840DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 − ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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