SI4840DY-T1 Vishay, SI4840DY-T1 Datasheet
SI4840DY-T1
Specifications of SI4840DY-T1
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SI4840DY-T1 Summary of contents
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... Top View Ordering Information: Si4840DY Si4840DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
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... Si4840DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 71188 S-03950—Rev. B, 16-May-03 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si4840DY Vishay Siliconix Capacitance C iss C oss 500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 ...
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... Si4840DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 = 250 mA 0 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot ...