SI4840DY-T1 Vishay, SI4840DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4840DY-T1
• Description: TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,10A I(D),SO
• Manufacturer: Vishay

Specifications of SI4840DY-T1

• Rohs Compliant: NO

Document Number: 71188
S-03950—Rev. B, 16-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
0.016
0.012
0.008
0.004
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 14 A
0.2
On-Resistance vs. Drain Current
= 20 V
10
7
V
SD
Q
g
T
- Source-to-Drain Voltage (V)
I
0.4
J
D
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
Gate Charge
20
14
0.6
30
21
0.8
V
T
V
GS
J
GS
= 25_C
40
28
= 4.5 V
1.0
= 10 V
1.2
50
35
3000
2500
2000
1500
1000
0.04
0.03
0.02
0.01
0.00
500
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 14 A
C
= 10 V
2
8
rss
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
16
4
I
D
= 14 A
Vishay Siliconix
C
50
C
oss
iss
24
6
75
Si4840DY
100
32
www.vishay.com
8
125
150
10
40
2-3