TCET1117 Vishay, TCET1117 Datasheet - Page 4

• Manufacturer Part Number: TCET1117
• Description: OPTOCOUPLER, PHOTOTRANSISTOR, 5000VRMS
• Manufacturer: Vishay

Specifications of TCET1117

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Ctr Max: 160%
• Isolation Voltage: 5kV
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Current Transfer Ratio: 160 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Document Number: 83546
Rev. 1.9, 14-Oct-09
CURRENT TRANSFER RATIO
PARAMETER
I
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
C
/I
F
V
V
V
TEST CONDITION
CE
For technical questions, contact:
CE
CE
V
V
= 5 V, I
IO
IO
= 5 V, I
= 5 V, I
(construction test only)
TEST CONDITION
t
Tr
Optocoupler, Phototransistor Output,
= 500 V, T
= 500 V, T
TEST CONDITION
100 %, t
High Temperature, 110 °C, Rated
= 60 s, t
(see figure 2)
V
F
F
F
IO
= 10 mA
= 1 mA
= 5 mA
= 500 V
test
test
amb
amb
= 1 s
= 10 s,
= 100 °C
= 150 °C
TCET1111G
TCET1112G
TCET1113G
TCET1114G
TCET1110G
TCET1115G
TCET1116G
TCET1117G
TCET1118G
TCET1119G
TCET1111G
TCET1112G
TCET1113G
TCET1114G
TCET1111
TCET1112
TCET1113
TCET1114
TCET1110
TCET1115
TCET1116
TCET1117
TCET1118
TCET1119
TCET1111
TCET1112
TCET1113
TCET1114
SYMBOL
PART
V
P
[e-mail]
SYMBOL
IOTM
T
I
diss
F
si
V
V
V
R
R
R
IOTM
pd
pd
IO
IO
IO
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
MIN.
10
10
10
1.6
1.3
8
12
11
9
TCET1110, TCET1110G
MIN.
100
130
200
100
160
13
22
34
56
50
50
80
40
63
Vishay Semiconductors
TYP.
TYP.
TYP.
30
45
70
90
MAX.
130
265
150
MAX.
6
MAX.
600
150
300
160
260
400
125
200
320
80
www.vishay.com
UNIT
UNIT
mW
mA
kV
°C
UNIT
kV
kV
kV
Ω
Ω
Ω
%
%
%
%
%
%
%
%
%
%
%
%
%
%
821