TESP5700 Vishay, TESP5700 Datasheet - Page 2

• Manufacturer Part Number: TESP5700
• Description: Photodiodes 60V 215mW 870nm
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder

Specifications of TESP5700

• Lens Type: Black Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 870 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 25 uA
• Maximum Dark Current: 10 nA
• Maximum Rise Time: 10 ns
• Maximum Fall Time: 10 ns
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Forward Voltage: 1.3V
• Responsivity: 0.57A/W
• Dark Current (max): 10nA
• Power Dissipation: 215mW
• Light Current: 25uA
• Rise Time: 10ns
• Fall Time: 10ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TESP5700
Vishay Semiconductors
Note
T
BASIC CHARACTERISTICS
T
www.vishay.com
514
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Reverse light current
Temperature coefficient of I
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
Cut-off frequency
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
16931
1000
100
10
1
20
T
amb
- Ambient Temperature (°C)
40
ra
o
60
For technical questions, contact: [e-mail]
V
R
V
V
V
= 10 V
R
R
R
E
E
E
E
E
80
V
e
e
= 2 V, R
= 2 V, R
= 2 V, R
e
e
e
R
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
V
V
Silicon PIN Photodiode, RoHS Compliant
V
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
R
R
I
R
R
V
= 2 V, λ = 870 nm
= 5 V, λ = 950 nm
= 100 µA, E = 0
R
= 2 V, f = 1 MHz
I
= 10 V, E = 0
F
L
L
L
V
V
100
= 50 Ω, λ = 870 nm
= 50 Ω, λ = 870 nm
= 50 Ω, λ = 870 nm
= 50 mA
R
R
= 2 V
= 2 V
2
2
, λ = 870 nm,
2
2
2
, λ = 870 nm,
, λ = 870 nm
, λ = 870 nm
, λ = 870 nm
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
TK
s(λ)
s(λ)
λ
C
R
V
V
I
I
λ
(BR)
I
ϕ
f
0.5
t
t
ro
ra
k
c
p
r
f
F
D
S
o
Vo
Ira
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
16
T
20
amb
- Ambient Temperature (°C)
790 to 980
λ = 950 nm
TYP.
V
40
- 2.6
0.13
0.57
0.37
± 60
430
870
0.9
17
40
23
25
10
10
35
R
1
= 5 V
60
Document Number: 81573
MAX.
1.3
10
80
Rev. 1.5, 13-Feb-09
100
mV/K
UNIT
MHz
%/K
A/W
A/W
deg
mV
nm
nm
nA
µA
µA
pF
ns
ns
Ω
V
V