TESP5700 Vishay, TESP5700 Datasheet - Page 3

Photodiodes 60V 215mW 870nm

TESP5700

Manufacturer Part Number
TESP5700
Description
Photodiodes 60V 215mW 870nm
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Datasheet

Specifications of TESP5700

Lens Type
Black Epoxy
Photodiode Material
Silicon
Peak Wavelength
870 nm
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
25 uA
Maximum Dark Current
10 nA
Maximum Rise Time
10 ns
Maximum Fall Time
10 ns
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Forward Voltage
1.3V
Responsivity
0.57A/W
Dark Current (max)
10nA
Power Dissipation
215mW
Light Current
25uA
Rise Time
10ns
Fall Time
10ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TESP5700
Manufacturer:
TOKO
Quantity:
12 843
Document Number: 81573
Rev. 1.5, 13-Feb-09
16934
16933
16932
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1000
100
100
Fig. 3 - Reverse Light Current vs. Irradiance
0.1
40
35
30
25
20
15
10
10
10
5
0
1
1
0.01
0.1
0.1
= 870 nm
E
V
V
e
R
R
- Irradiance ( mW/cm )
0.1
1.0
- Reverse Voltage (V)
- Reverse Voltage (V)
11
f = 1 MHz
E = 0
Silicon PIN Photodiode, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
10.0
V
= 870 nm
1 mW/cm
0.1 mW/cm
1
R
0
= 2 V
2
2
2
100.0
100
10
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
16935
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
94 8413
1.0
0.9
0.8
0.7
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
0.6
0.4
850
Vishay Semiconductors
- Wavelenght (nm)
0.2
950
0
10
1050
°
TESP5700
20
°
www.vishay.com
1150
30°
40°
50°
60°
70°
80°
515

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