TLP181(Y-TPRFT) Toshiba, TLP181(Y-TPRFT) Datasheet - Page 3

• Manufacturer Part Number: TLP181(Y-TPRFT)
• Description: Transistor Output Optocouplers COUPLER TRANS OUT OPTOCPLR/SOLID STATE
• Manufacturer: Toshiba

Specifications of TLP181(Y-TPRFT)

• Forward Current: 10 mA
• Maximum Input Diode Current: 10 mA
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 50 % to 150 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SMD-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta ≥ 25°C)
Isolation voltage
(AC, 1min., R.H. ≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) Device considered a two−terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Supply voltage
Forward current
Collector current
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current detating
Pulse forward current
(100μs pulse, 100pps)
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Collector power dissipation
(1 Circuit)
Collector power dissipation
derating (1 Circuit Ta ≥ 25°C)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
(Note 1)
(Ta = 25°C)
ΔP
ΔP
ΔI
Symbol
V
V
T
BV
T
T
F
I
V
P
CEO
ECO
C
P
T
I
I
FP
T
T
stg
opr
sol
C
F
/ °C
R
C
T
j
j
/ °C
/ °C
S
Symbol
V
I
I
CC
C
F
3
−1.4 (Ta ≥89°C)
Min
―
―
―
−55 to 125
−55 to 110
260 (10s)
Rating
3750
−1.5
−2.0
125
150
125
200
50
80
50
1
5
7
Typ.
16
5
1
Max
48
20
10
Unit
mA
mA
V
mW / °C
mW / °C
mA / °C
V
Unit
mW
mW
mA
mA
°C
°C
°C
°C
°C
rms
A
V
V
V
2009-11-12
TLP181