MPSW45ARLRA ON Semiconductor, MPSW45ARLRA Datasheet - Page 3

• Manufacturer Part Number: MPSW45ARLRA
• Description: Darlington Transistors 1A 50V NPN
• Manufacturer: ON Semiconductor

Specifications of MPSW45ARLRA

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 1 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 25000, 15000, 4000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

500
200
100
200
100
5.0
50
20
10
70
50
30
20
10
10
1.0
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
20
2.0
= 10 mA
Figure 4. Total Wideband Noise Voltage
100 mA
1.0 mA
50 100 200
5.0
Figure 2. Noise Voltage
R
S
, SOURCE RESISTANCE (kΩ)
10
f, FREQUENCY (Hz)
500 1 k 2 k
20
BANDWIDTH = 1.0 Hz
R
S
≈ 0
50
I
C
= 1.0 mA
100
100 mA
5 k 10 k 20 k
200
NOISE CHARACTERISTICS
10 mA
(V
CE
http://onsemi.com
500
50 k 100 k
= 5.0 Vdc, T
1000
3
0.07
0.05
0.03
0.02
8.0
6.0
4.0
2.0
A
2.0
1.0
0.7
0.5
0.3
0.2
0.1
14
12
10
0
= 25°C)
1.0
10 20
I
C
2.0
= 1.0 mA
50 100 200
Figure 5. Wideband Noise Figure
5.0
Figure 3. Noise Current
R
S
, SOURCE RESISTANCE (kΩ)
10
f, FREQUENCY (Hz)
100 mA
500 1 k 2 k
I
C
20
10 mA
100 mA
= 1.0 mA
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 1.0 Hz
10 mA
50
100
5 k 10 k 20 k 50 k 100 k
200
500
1000