BDX33B Bourns Inc., BDX33B Datasheet
BDX33B
Specifications of BDX33B
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BDX33B Summary of contents
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... NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/° AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Pin electrical contact with the mounting base. ...
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... BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter 100 mA (BR)CEO C breakdown voltage Collector-emitter CEO cut-off current 100 V CB Collector cut-off V = 120 CBO current 100 120 V CB Emitter cut-off EBO ...
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... BE(off) † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS PARAMETER † TEST CONDITIONS ...
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... BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 50000 10000 1000 300 µs, duty cycle < 100 0·5 1· Collector Current - A C Figure 1. 3·0 2·5 2·0 1·5 1·0 0·5 4 TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE TCS130AF 2· ...
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... AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 T - Case Temperature - °C C Figure 4. TIS130AB 125 150 5 ...