BD651 Bourns Inc., BD651 Datasheet

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BD651

Manufacturer Part Number
BD651
Description
Darlington Transistors 62.5W NPN Silicon
Manufacturer
Bourns Inc.
Datasheet
1.BD649.pdf (4 pages)

Specifications of BD651

Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-220
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
140 V
Maximum Dc Collector Current
8 A
Maximum Collector Cut-off Current
200 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
750
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
●
●
●
●
R O D U C T
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
FE
E
S
of 750 at 3 V, 3 A
= 0)
B
= 0.1 Ω, V
I N F O R M A T I O N
= 0)
p
≤ 0.3 ms, duty cycle ≤ 10%.
CC
= 20 V.
RATING
B
C
E
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER DARLINGTONS
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645, BD647, BD649, BD651
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
I
P
P
CBO
CEO
EBO
CM
T
I
I
T
C
stg
B
tot
tot
L
j
C
B(on)
2
2
3
1
= 5 mA, R
-65 to +150
-65 to +150
VALUE
62.5
100
120
140
100
120
260
0.3
80
60
80
12
50
5
8
2
BE
= 100 Ω,
MDTRACA
UNIT
mJ
°C
°C
°C
W
W
V
V
V
A
A
A
1

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BD651 Summary of contents

Page 1

... Specifications are subject to change without notice. NPN SILICON POWER DARLINGTONS Pin electrical contact with the mounting base. RATING BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 BD645, BD647, BD649, BD651 TO-220 PACKAGE (TOP VIEW MDTRACA SYMBOL VALUE UNIT 80 100 V V CBO ...

Page 2

... BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter (BR)CEO C breakdown voltage Collector-emitter CEO cut-off current 100 V CB Collector cut-off V = 120 CBO current Emitter cut-off EBO EB current Forward current transfer ratio ...

Page 3

... BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT T = -40° 25° 100° 100 300 µs, duty cycle < 0·5 1· Collector Current - A C Figure 3. BD645, BD647, BD649, BD651 vs COLLECTOR CURRENT TCS130AB / 100 -40° 25° 100°C C 1· Collector Current - A C Figure 2. TCS130AC ...

Page 4

... BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS 1·0 0·1 0.01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 BD645 BD647 BD649 BD651 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 T - Case Temperature - °C C Figure 5 ...

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