BDW23 Bourns Inc., BDW23 Datasheet - Page 4

• Manufacturer Part Number: BDW23
• Description: Darlington Transistors 50W 6A NPN
• Manufacturer: Bourns Inc.

Specifications of BDW23

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Package / Case: TO-220
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 45 V
• Maximum Dc Collector Current: 6 A
• Maximum Collector Cut-off Current: 200 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage(max): 45V
• Emitter-base Voltage (max): 5V
• Base-emitter Saturation Voltage (max): 2.5@8mA@2AV
• Collector-emitter Saturation Voltage: 2@8mA@2A/3@60mA@6AV
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BDW23, BDW23A, BDW23B, BDW23C
NPN SILICON POWER DARLINGTONS
4
100
1·0
0·1
MAXIMUM SAFE OPERATING REGIONS
10
60
50
40
30
20
10
0
1·0
0
MAXIMUM POWER DISSIPATION
THERMAL INFORMATION
MAXIMUM FORWARD-BIAS
25
V
SAFE OPERATING AREA
CE
CASE TEMPERATURE
BDW23
BDW23A
BDW23B
BDW23C
- Collector-Emitter Voltage - V
T
C
- Case Temperature - °C
10
50
Figure 4.
Figure 5.
vs
75
100
100
R O D U C T
DC Operation
t
d = 0.1 = 10%
p
= 300 µs,
125
Specifications are subject to change without notice.
SAS120AB
TIS110AA
AUGUST 1993 - REVISED SEPTEMBER 2002
1000
150
I N F O R M A T I O N