BDV65 Bourns Inc., BDV65 Datasheet

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BDV65

Manufacturer Part Number
BDV65
Description
Darlington Transistors 125W 12A NPN
Manufacturer
Bourns Inc.
Datasheet

Specifications of BDV65

Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-93
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
12 A
Maximum Collector Cut-off Current
400 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
5V
Collector-emitter Saturation Voltage
2@20mA@5AV
Collector Current (dc) (max)
12A
Dc Current Gain
1000@5A@4V
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
SOT-93
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
R O D U C T
Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
125 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum h
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
FE
E
of 1000 at 4 V, 5 A
= 0)
B
I N F O R M A T I O N
= 0)
p
≤ 0.1 ms, duty cycle ≤ 10%
RATING
C
B
E
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER DARLINGTONS
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65, BDV65A, BDV65B, BDV65C
SOT-93 PACKAGE
(TOP VIEW)
SYMBOL
V
V
V
T
I
P
P
CBO
CEO
EBO
CM
T
I
I
T
1
2
3
C
stg
B
tot
tot
L
j
-65 to +150
-65 to +150
VALUE
100
120
100
120
125
260
0.5
3.5
60
80
60
80
12
15
5
MDTRAAA
UNIT
°C
°C
°C
W
W
V
V
V
A
A
A
1

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BDV65 Summary of contents

Page 1

... JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER DARLINGTONS Pin electrical contact with the mounting base. RATING BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65, BDV65A, BDV65B, BDV65C SOT-93 PACKAGE (TOP VIEW SYMBOL VALUE CBO 100 120 60 80 ...

Page 2

... BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter (BR)CEO C breakdown voltage Collector-emitter CEO cut-off current 100 V CB Collector cut-off V = 120 CBO current Emitter cut-off EBO EB current Forward current transfer ratio ...

Page 3

... COLLECTOR CURRENT T = -40° 25° 100° 100 300 µs, duty cycle < 0·5 1· Collector Current - A C Figure 3. BDV65, BDV65A, BDV65B, BDV65C vs COLLECTOR CURRENT TCS140AE = 300 µs, duty cycle < 100 -40° 25° 100°C C 1· Collector Current - A C Figure 2. TCS140AF 10 ...

Page 4

... BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS 140 120 100 4 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 T - Case Temperature - °C C Figure TIS140AA 125 150 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. ...

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