MUN5113DW1T1 ON Semiconductor, MUN5113DW1T1 Datasheet

Digital Transistors 100mA 50V BRT Dual

MUN5113DW1T1

Manufacturer Part Number
MUN5113DW1T1
Description
Digital Transistors 100mA 50V BRT Dual
Manufacturer
ON Semiconductor
Datasheet
1.MUN5115DW1T1.pdf (20 pages)

Specifications of MUN5113DW1T1

Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
47 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SC-88
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
- 0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MUN5113DW1T1G
Manufacturer:
ON
Quantity:
30 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MUN5113DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
MUN5113DW1T1G
Quantity:
4 500
MUN5111DW1T1G Series
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1G series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
(T
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance,
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance,
Thermal Resistance,
Junction and Storage Temperature Range
A
The Bias Resistor Transistor (BRT) contains a single transistor with a
A
A
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
= 25°C unless otherwise noted, common for Q
= 25°C
= 25°C
(Both Junctions Heated)
(One Junction Heated)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Lead
Characteristic
Characteristic
Rating
Preferred Devices
Symbol
Symbol
Symbol
T
V
V
R
R
R
J
P
P
, T
CBO
CEO
I
qJA
qJA
qJL
C
D
D
stg
1
and Q
187 (Note 1)
256 (Note 2)
670 (Note 1)
490 (Note 2)
250 (Note 1)
385 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
1.5 (Note 1)
2.0 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
2
Value
−100
)
Max
Max
−50
−50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Unit
mW
mW
Vdc
Vdc
°C
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
See specific marking information in the device marking table
on page 2 of this data sheet.
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
xx
M
G
ORDERING INFORMATION
(3)
(4)
Q
= Device Code (Refer to page 2)
= Date Code
= Pb−Free Package
1
MARKING DIAGRAM
http://onsemi.com
SC−88 / SOT−363
R
6
1
2
CASE 419B
STYLE 1
(5)
R
xx M G
1
Publication Order Number:
R
(2)
G
1
1
MUN5111DW1T1/D
R
2
Q
(1)
(6)
2

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MUN5113DW1T1 Summary of contents

Page 1

... The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1G series, two BRT devices are housed in the SOT− ...

Page 2

... ORDERING INFORMATION, DEVICE MARKINGS AND RESISTOR VALUES Device Package MUN5111DW1T1G SOT−363 (Pb−Free) MUN5112DW1T1G SOT−363 (Pb−Free) MUN5113DW1T1G SOT−363 (Pb−Free) MUN5114DW1T1G SOT−363 (Pb−Free) MUN5115DW1T1G SOT−363 (Pb−Free) MUN5116DW1T1G SOT−363 (Pb−Free) MUN5130DW1T1G SOT−363 (Pb−Free) MUN5131DW1T1G SOT−363 (Pb−Free) MUN5132DW1T1G SOT− ...

Page 3

... (BR)CEO V CE(sat) MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5137DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5111DW1T1G h MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G http://onsemi.com 3 and Min Typ Max − − −100 CBO − ...

Page 4

... MUN5115DW1T1G MUN5116DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5137DW1T1G MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G MUN5111DW1T1G R MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G http://onsemi.com 4 and Q ) (Continued Min Typ Max OL − ...

Page 5

ALL MUN5111DW1T1G SERIES DEVICES 300 250 200 150 100 R = 490°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve − ALL DEVICES http://onsemi.com 5 100 150 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1G -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1G -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 8

... TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1G -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 14. Output Capacitance 100 10 1 0.1 0 Figure 16. Input Voltage versus Output Current 1000 25°C 75°C 100 100 MHz 25° 0.1 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1G 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) TBD V , REVERSE BIAS VOLTAGE (VOLTS) ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat ...

Page 15

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1G 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 47. V versus I CE(sat ...

Page 16

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1G 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat) 3.5 3 2.5 2 1.5 1 ...

Page 17

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 57. V versus I CE(sat ...

Page 18

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1G 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 62. V versus I CE(sat) 1.2 1.0 0.8 0.6 0.4 0 ...

Page 19

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1G −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 67. V versus I CE(sat) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ...

Page 20

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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