MUN5113DW1T1 ON Semiconductor, MUN5113DW1T1 Datasheet - Page 9

• Manufacturer Part Number: MUN5113DW1T1
• Description: Digital Transistors 100mA 50V BRT Dual
• Manufacturer: ON Semiconductor

Specifications of MUN5113DW1T1

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 47 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: - 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
4.5
3.5
2.5
1.5
0.5
0.01
0.1
4
3
2
1
0
0
1
0
2
I
C
/I
B
4
= 10
Figure 19. Output Capacitance
V
6
R
Figure 17. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
8
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1G
10
15 20
CE(sat)
0.1
10
40
1
0
Figure 21. Input Voltage versus Output Current
25 30
V
versus I
75°C
T
O
A
= 0.2 V
= -25°C
f = 1 MHz
l
T
E
10
A
35 40
60
= 0 V
= 25°C
C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
75°C
45 50
20
80
9
T
A
30
180
160
140
120
100
100
10
80
60
40
20
= -25°C
1
0
1
0
Figure 20. Output Current versus Input Voltage
V
25°C
CE
2
= 10 V
40
4
2
6
Figure 18. DC Current Gain
I
C
8
V
, COLLECTOR CURRENT (mA)
in
50
, INPUT VOLTAGE (VOLTS)
10
T
4
A
15 20 40 50 60 70 80 90
= 75°C
-25°C
-25°C
6
25°C
V
O
= 5 V
T
A
= 75°C
8
25°C
10
100