NSBC114EPDXV6T5 ON Semiconductor, NSBC114EPDXV6T5 Datasheet
NSBC114EPDXV6T5
Specifications of NSBC114EPDXV6T5
Available stocks
Related parts for NSBC114EPDXV6T5
NSBC114EPDXV6T5 Summary of contents
Page 1
... SOT−563 4 mm pitch NSBC114EPDXV6T1G 4000/Tape & Reel SOT−563 2 mm pitch NSBC114EPDXV6T5G 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet ...
Page 2
DEVICE MARKING AND RESISTOR VALUES Device NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G (Note 2) NSBC143TPDXV6T1G (Note 2) NSBC113EPDXV6T1G (Note 2) NSBC123EPDXV6T1G (Note 2) NSBC143EPDXV6T1G (Note 2) NSBC143ZPDXV6T1G (Note 2) NSBC124XPDXV6T1G (Note 2) NSBC123JPDXV6T1G (Note 2) ELECTRICAL CHARACTERISTICS (T = 25°C unless ...
Page 3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q A Characteristic ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage ( mA 0 ...
Page 4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q A Characteristic ON CHARACTERISTICS (Note 3) Input Resistor Resistor Ratio 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ...
Page 5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...
Page 6
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...
Page 7
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...
Page 8
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...
Page 9
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...
Page 10
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...
Page 11
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...
Page 12
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 ...
Page 13
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 42. DC Current Gain − PNP TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 44. DC ...
Page 14
... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...