NSBC114EPDXV6T5 ON Semiconductor, NSBC114EPDXV6T5 Datasheet - Page 6

• Manufacturer Part Number: NSBC114EPDXV6T5
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of NSBC114EPDXV6T5

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 357 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
4
3
2
1
0
1
0
0
I
C
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR
/I
B
= 10
10
Figure 9. Output Capacitance
V
R
Figure 7. V
, REVERSE BIAS VOLTAGE (VOLTS)
I
20
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
100
0.1
10
1
0
30
T
Figure 11. Input Voltage versus Output Current
versus I
A
75°C
= -25°C
V
O
= 0.2 V
f = 1 MHz
l
T
40
C
10
E
40
A
= 0 V
= 25°C
I
C
, COLLECTOR CURRENT (mA)
25°C
http://onsemi.com
50
20
50
6
0.001
1000
T
0.01
100
100
A
30
0.1
10
10
1
= -25°C
75°C
1
0
Figure 10. Output Current versus Input
1
75°C
25°C
40
2
Figure 8. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
T
3
, INPUT VOLTAGE (VOLTS)
A
50
25°C
= -25°C
4
Voltage
10
5
6
V
O
7
= 5 V
V
8
T
CE
A
= 75°C
= 10 V
-25°C
9
25°C
100
10