R1600B16C Ruttonsha, R1600B16C Datasheet - Page 2

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R1600B16C

Manufacturer Part Number
R1600B16C
Description
Diodes (General Purpose, Power, Switching) 1600 Amp 1600 Volt
Manufacturer
Ruttonsha
Datasheet

Specifications of R1600B16C

Product
Power Diodes
Peak Reverse Voltage
1600 V
Max Surge Current
16600 A
Configuration
Single
Forward Voltage Drop
1.64 V
Maximum Reverse Leakage Current
50 mA
Mounting Style
Screw
Package / Case
DO-200AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FORWARD CONDUCTION
ELECTRICAL SPECIFICATION
VOLTAGE RATINGS
THERMAL AND MECHANICAL SPECIFICATION
I
I
I
I
I
V
V
r
r
V
R
F
2
F(AV)
F(RMS)
FSM
2
f1
f2
T
w t
T
t
√t
F(TO)1
F(TO)2
thJ-hs
Type Number
FM
stg
J
R1600 B
Parameter
Max. average Forward current
@ heat sink temperature
Max. RMS Forward current
Max. peak one cycle Forward
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of Forward
slope resistance
High level value of Forward
slope resistance
Max. Forward voltage drop
Max. operating temperature range
Max. storage temperature range
Max. thermal resistance, junction
to heat sink
Mounting force, ±10%
Approximate weight
Case style
Parameter
2
2
t for fusing
√t for fusing
Voltage
16
Code
18
0 4
0 8
1 2
20
22
25
STANDARD RECOVERY DIODES
V
RRM
, max. repetitive peak
reverse voltage
1600
2200
2500
1200
2000
1800
200
800
V
1600(820)
-40 to 180
-55 to 200
R1600 B
55(85)
R1600 B
(1500)
16600
14000
13860
14700
0.073
0.031
DO-200AB(B-PUK)
3010
1386
0.83
0.95
0.27
0.25
1.64
980
255
R1600 B
kA
Units
kA
Units
K/W
(kg)
mΩ
0
0
A
V
V
A
N
C
C
2
2
g
√s
s
V
RRM
Conditions
180
double side (single side) cooled
@25
t = 10ms
t = 10ms
t = 10ms
t = 10ms
t = 0.1 to 10ms. No voltage reapplied.
(16.7% x π x I
(π x I
(16.7% x π x I
(π x I
I
DC operation single side cooled
DC operation double side cooled
Conditions
, max. non- repetitive peak
pk
See outline
= 3000A, T
reverse voltage
0
0
F(AV)
F(AV)
conduction, half sine wave
C heat sink temperature (double side cooled)
1700
1300
< I < 20 x π x I
< I < 20 x π x I
2100
2300
2600
1900
300
900
V
F(AV)
F(AV)
J
No voltage
reapplied
100%V
reapplied
No voltage
reapplied
100%V
reapplied
= T
< I < π x I
< Ι < π x I
J
max., t
RRM
RRM
F(AV)
F(AV)
p
), T
) T
F(AV)
F(AV)
= 10ms sine pulse
Sinusodial half wave,
Initial T
J
J
), T
), T
= T
= T
J
J
J
J
@ T
max.
J
= T
= T
max.
= T
I
DRM
J
J
J
J
max.
max.
= T
mA
max.
max.
5 0
J
max.
2

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