BZX384-C12,115 NXP Semiconductors, BZX384-C12,115 Datasheet - Page 6

• Manufacturer Part Number: BZX384-C12,115
• Description: DIODE ZENER 12V 300MW SOD323
• Manufacturer: NXP Semiconductors

Specifications of BZX384-C12,115

• Package / Case: SC-76, SOD-323, UMD2
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Tolerance: ±5%
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Voltage - Zener (nom) (vz): 12V
• Impedance (max) (zzt): 25 Ohm
• Zener Voltage: 12.05 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 8.4 mV / K
• Zener Current: 200 mA
• Power Dissipation: 300 mW
• Maximum Reverse Leakage Current: 100 nA
• Maximum Zener Impedance: 25 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057642115::BZX384-C12 T/R::BZX384-C12 T/R

Table 2 Per type BZX384-B/C27 to B/C75
T
27
30
33
36
39
43
47
51
56
62
68
75
j
BZX-
Bxxx
Cxxx
= 25 °C unless otherwise specified.
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
MIN.
Tol. ±2% (B)
WORKING VOLTAGE V
at I
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
MAX.
Ztest
= 2 mA
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MIN.
Tol. ±5% (C)
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
Z
MAX.
(V)
at I
65
70
75
80
80
85
85
90
100
120
150
170
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 0.5 mA at I
300
300
325
350
350
375
375
400
425
450
475
500
MAX.
r
dif
(Ω)
25
30
35
35
40
45
50
60
70
80
90
95
TYP.
Ztest
= 2 mA
80
80
80
90
130
150
170
180
200
215
240
255
MAX.
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
COEFFICIENT S
MIN.
(see Figs 4 and 5)
TEMPERATURE
at I
Ztest
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
TYP.
= 2 mA
Z
(mV/K)
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
MAX.
50
50
45
45
45
40
40
40
40
35
35
35
DIODE CAP.
at f = 1 MHz;
V
C
R
MAX.
d
= 0 V
(pF)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
CURRENT I
NON-REPETITIVE
PEAK REVERSE
at t
T
amb
p
MAX.
= 100 μs;
= 25 °C
ZSM
(A)