CAT5114VI-10-GT3 CATALYST SEMICONDUCTOR, CAT5114VI-10-GT3 Datasheet - Page 2

• Manufacturer Part Number: CAT5114VI-10-GT3
• Description: DPP, NV 32 TAPS, U/D
• Manufacturer: CATALYST SEMICONDUCTOR

Specifications of CAT5114VI-10-GT3

• End To End Resistance: 10kohm
• Track Taper: Linear
• Resistance Tolerance: ± 20%
• No. Of Steps: 32
• Supply Voltage Range: 2.5V To 6V
• Control Interface: Serial
• No. Of Pots: Single

Functional Diagram
U/D
INC
CS
R = Resistance:
L = Assembly Location
4 = Lead Finish − NiPdAu
B = Product Revision (Fixed as “B”)
CAT5114L = Device Code (PDIP)
CAT5114V = Device Code (SOIC)
T = Temperature Range (Industrial)
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
XXXX = Last Four Digits of Assembly Lot Number
2 = 10 kW
4 = 50 kW
5 = 100 kW
CAT5114LT
YMXXXX
Power On
Figure 1. General
PDIP
Memory
Control
Recall
GND
V
and
RL4B
CC
CAT5114VT
YMXXXX
SOIC
R
R
R
GND
H
W
L
V
U/D
INC
RL4B
/V
/V
CS
/V
CC
L
H
W
DEVICE MARKING INFORMATION
Nonvolatile
Store and
Up/Down
Memory
Circuitry
Counter
Control
Recall
5−Bit
5−Bit
http://onsemi.com
ABMS = CAT5114ZI−10−GT3
ABMT = CAT5114ZI−50−GT3
ABTH = CAT5114ZI−00−GT3
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
P = Product Revision
TDFN
2
XXX
Figure 2. Detailed
EFL
Decoder
YM
Position
MSOP
ABMS
32−
YMP
31
30
29
28
2
1
0
EF = CAT5114VP2I10GT3
GV = CAT5114VP2I50GT3
GW = CAT5114VP2I00GT3
L = Assembly Location
XXX = Last Three Digits of Assembly Lot Number
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
Transfer
Gates
Resistor
Array
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
B = Product Revision (Fixed as “B”)
R = Resistance:
5114G = Device Code
T = Temperature Range
2 = 10 kW
4 = 50 kW
5 = 100 kW
R
R
L
R
W
/V
TSSOP
H
5114GT
/V
L
/V
YMBR
Figure 3. Electronic
W
H
Implementation
Potentiometer
R
R
R
W
H
L
/V
/V
/V
W
H
L