AD8432ACPZ-RL Analog Devices Inc, AD8432ACPZ-RL Datasheet - Page 5

• Manufacturer Part Number: AD8432ACPZ-RL
• Description: Dual Ultra Low Noise InAmp
• Manufacturer: Analog Devices Inc

Specifications of AD8432ACPZ-RL

• Amplifier Type: Voltage Feedback
• Number Of Circuits: 2
• Output Type: Differential
• Slew Rate: 295 V/µs
• -3db Bandwidth: 200MHz
• Voltage - Input Offset: 1000µV
• Current - Supply: 24mA
• Current - Output / Channel: 77mA
• Voltage - Supply, Single/dual (±): 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-LFCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain Bandwidth Product: -
• Current - Input Bias: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Voltage
Power Dissipation
Temperature
Package Glass Transition Temperature (T
Lead Temperature (Soldering, 60 sec)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
soldered in a circuit board for surface-mount packages. The θ
value in Table 3 assumes a 4-layer JEDEC standard board with
zero airflow.
Table 3. Thermal Resistance
Parameter
40-Lead LFCSP
1
4-layer JEDEC board (2S2P).
JA
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
is specified for the worst-case conditions, that is, a device
θ
57.9
JA
1
θ
11.2
JC
G
)
θ
35.9
JB
Rating
5.5 V
0 V to VPS
120 mW
–40°C to +85°C
–65°C to +150°C
150°C
300°C
Ψ
1.1
JT
Unit
°C/W
Rev. B | Page 5 of 28
JA
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8432 is limited
by the associated rise in junction temperature (T
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the amplifiers. Exceeding a temperature of 150°C for an
extended period can cause changes in silicon devices, potentially
resulting in a loss of functionality.
ESD CAUTION
J
) on the die. At
AD8432