ADUC814ARUZ-REEL7 Analog Devices Inc, ADUC814ARUZ-REEL7 Datasheet - Page 32

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ADUC814ARUZ-REEL7

Manufacturer Part Number
ADUC814ARUZ-REEL7
Description
12 BIT ADC WITH EMBEDDED 8-BIT MICRO I.C
Manufacturer
Analog Devices Inc
Series
MicroConverter® ADuC8xxr
Datasheet

Specifications of ADUC814ARUZ-REEL7

Core Processor
8052
Core Size
8-Bit
Speed
16.78MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
POR, PSM, Temp Sensor, WDT
Number Of I /o
17
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
640 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 6x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
EVAL-ADUC814QSZ - KIT DEV FOR ADUC814 MICROCONVRTR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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ADuC814
USING FLASH/EE DATA MEMORY
The user Flash/EE data memory array consists of 640 bytes that
are configured into 160 (00H to 9FH) 4-byte pages as shown in
Figure 36.
As with other ADuC814 user-peripheral circuits, the interface
to this memory space is via a group of registers mapped in the
SFR space. EADRL is used to hold the 8-bit address of the page
to be accessed. A group of four data registers (EDATA1–4) is
used to hold 4-byte page data just accessed. Finally, ECON is an
8-bit control register that may be written with one of five
Flash/EE memory access commands to trigger various read,
write, erase, and verify functions. These registers can be
summarized as follows:
ECON
SFR Address
Function
Default
EADRL
SFR Address
Function
Default
EDATA1–4
SFR Address
Function
Default
Table 11. ECON–Flash/EE Memory Control Register Command Modes
Command
Byte
01H
02H
03H
04H
05H
06H
07H to FFH
Figure 36. Flash/EE Data Memory Configuration
9FH
00H
B9H
Controls access to 640 bytes Flash/EE data space.
00H
C6H
Holds the Flash/EE data page address.
(640 bytes = > 160 page addresses)
00H
BCH to BFH, respectively
Holds Flash/EE data memory page write or page
read data bytes.
EDATA1–4 > 00H
Command Mode
READ
PROGRAM
Reserved
VERIFY
ERASE
ERASE-ALL
Reserved
BYTE 1
BYTE 1
BYTE 2 BYTE 3 BYTE 4
BYTE 2 BYTE 3 BYTE 4
Description
Results in 4 bytes being read into EDATA1–4 from memory page address contained in EADRL.
Results in 4 bytes (EDATA1–4) being written to memory page address in EADRL. This write command
assumes the designated write page has been erased.
For internal use. 03H should not be written to the ECON SFR.
Allows the user to verify if data in EDATA1–4 is contained in page address designated by EADRL. A
subsequent read of the ECON SFR results in a zero being read if the verification is valid, a nonzero
value is read to indicate an invalid verification.
Results in an erase of the 4-byte page designated in EADRL.
Results in an erase of the full Flash/EE aata memory, 160-page (640 bytes) array.
For future use.
Rev. A | Page 32 of 72
A block diagram of the SFR interface to the Flash/EE data
memory array is shown in Figure 37.
ECON—Flash/EE Memory Control SFR
This SFR acts as a command interpreter and may be written
with one of five command modes to enable various read,
program, and erase cycles as detailed in Table 11.
FUNCTION:
RECEIVES COMMAND DATA
EADRL
FUNCTION:
HOLDS THE 8-BIT PAGE
ADDRESS POINTER
Figure 37. Flash/EE Data Memory Control and Configuration
9FH
00H
BYTE 1
BYTE 1
INTERPRETER LOGIC
ECON COMMAND
BYTE 2 BYTE 3 BYTE 4
BYTE 2 BYTE 3 BYTE 4
ECON
FUNCTION:
INTERPRETS THE FLASH
COMMAND WORD
FUNCTION:
HOLDS THE 4-BYTE
PAGE DATA
EDATA1 (BYTE 1)
EDATA2 (BYTE 2)
EDATA3 (BYTE 3)
EDATA4 (BYTE 4)

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