CY62167DV30LL-55BVXIT Cypress Semiconductor Corp, CY62167DV30LL-55BVXIT Datasheet - Page 5

CY62167DV30LL-55BVXIT

CY62167DV30LL-55BVXIT

Manufacturer Part Number
CY62167DV30LL-55BVXIT
Description
CY62167DV30LL-55BVXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62167DV30LL-55BVXIT

Format - Memory
RAM
Memory Type
SRAM
Memory Size
16M (1M x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-VFBGA
Density
16Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3V
Address Bus
20b
Package Type
BGA
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
30mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Word Size
16b
Number Of Words
1M
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62167DV30LL-55BVXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY62167DV30LL-55BVXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY62167DV30LL-55BVXIT
Quantity:
2 198
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Notes
Document Number : 38-05328 Rev. *I
C
C
V
I
t
t
Parameter
11. Tested initially and after any design or process changes that may affect these parameters.
12. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
13. Full device operation requires linear V
CCDR
CDR
R
Parameter
IN
OUT
DR
JA
JC
[13]
Parameter
[11]
OUTPUT
[11]
Parameters
V
Data retention current
Chip deselect to data retention time
Operation recovery time
CC
[11]
INCLUDING
V
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
R
V
R1
R2
for Data retention
CC
TH
JIG AND
TH
SCOPE
50 pF
Input capacitance
Output capacitance
[12]
Description
Description
Description
R1
CC
ramp from V
Equivalent to:
R2
(Over the Operating Range)
DR
16667
15385
2.5 V
OUTPUT
8000
to V
1.20
Still Air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
T
Rise Time = 1 V/ns
CC(min.)
A
= 25 °C, f = 1 MHz, V
> 100 s or stable at V
THE VENIN EQUIVALENT
CE
V
V
GND
V
CC
IN
Test Conditions
Test Conditions
CC
1
= 1.5 V,
> V
> V
CC
CC
10%
R
– 0.2 V or CE
– 0.2V or V
TH
CC
3.0 V
1554
1103
1.75
Conditions
645
CC(min.)
ALL INPUT PULSES
= V
90%
CY62167DV30LL-55
CY62167DV30LL-70
CC(typ)
V
IN
> 100 s.
2
< 0.2 V
< 0.2 V,
CC
VFBGA
CY62167DV30 MoBL
= V
90%
55
16
10%
CC(typ)
Max
10
Fall Time = 1 V/ns
8
Min
1.5
55
70
0
, T
A
= 25 °C
Unit
Typ
TSOP I
V
4.3
60
[12]
Max
10
Page 5 of 17
Unit
pF
pF
C / W
C / W
Unit
Unit
A
ns
ns
V

Related parts for CY62167DV30LL-55BVXIT