CY7C1315BV18-250BZC Cypress Semiconductor Corp, CY7C1315BV18-250BZC Datasheet - Page 23

• Manufacturer Part Number: CY7C1315BV18-250BZC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-250BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 38-05620 Rev. *C
Switching Characteristics
t
t
t
t
t
DLL Timing
t
t
t
Notes:
Parameter
28. t
29. At any given voltage and temperature t
CQOH
CQD
CQDOH
CHZ
CLZ
KC Var
KC lock
KC Reset
Cypress
CHZ
, t
CLZ
, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
t
t
t
t
t
t
t
t
Consortium
CHCQX
CQHQV
CQHQX
CHQZ
CHQX1
KC Var
KC lock
KC Reset
Parameter
Echo Clock Hold after C/C
Clock Rise
Echo Clock High to Data
Valid
Echo Clock High to Data
Invalid
Clock (C/C)
Rise to High-Z
(Active to High-Z)
Clock (C/C) Rise to
Low-Z
Clock Phase Jitter
DLL Lock Time (K, C)
K Static to DLL Reset
[28, 29]
Description
CHZ
Over the Operating Range
is less than t
[28, 29]
CLZ
and t
CHZ
–0.45
–0.27
–0.45
1024
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
300 MHz
30
–
–
less than t
[24,26]
0.27
0.45
0.20
–
–
–
–
CO
–0.45
–0.27
–0.45
(continued)
1024
.
278 MHz
30
–
–
0.27
0.45
0.20
–
–
–
–
–0.45
–0.30
–0.45
1024
250 MHz
30
–
–
–
0.30
0.45
0.20
–
–
–
–
–0.45
–0.35
–0.45
1024
200 MHz
30
–
–
–
CY7C1313BV18
CY7C1315BV18
CY7C1311BV18
CY7C1911BV18
0.35
0.45
0.20
–
–
–
–
–0.50
–0.40
–0.50
1024
167 MHz
30
–
–
–
Page 23 of 28
0.40
0.50
0.20
–
–
–
–
Cycles
Unit
ns
ns
ns
ns
ns
ns
ns
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