EVAL-ADF5000EB2Z Analog Devices Inc, EVAL-ADF5000EB2Z Datasheet - Page 3

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EVAL-ADF5000EB2Z

Manufacturer Part Number
EVAL-ADF5000EB2Z
Description
Evaluation Board
Manufacturer
Analog Devices Inc
Datasheet

Specifications of EVAL-ADF5000EB2Z

Rohs Compliant
YES
Silicon Manufacturer
Analog Devices
Kit Application Type
Clock & Timing
Application Sub Type
VCO
Features
Integrated RF Decoupling Capacitors, Low Power Consumption, Low Phase Noise
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
SPECIFICATIONS
VDD1 = VDD2 = 3.3 V ± 10%, GND = 0 V; dBm referred to 50 Ω; T
range is −40°C to +105°C.
Table 1.
Parameter
RF CHARACTERISTICS
CE INPUT
POWER SUPPLIES
Input Frequency
RF Input Sensitivity
Output Power
Output Voltage Swing
Phase Noise
Reverse Leakage
Second Harmonic Content
Third Harmonic Content
Fourth Harmonic Content
Fifth Harmonic Content
Input High Voltage, V
Input Low Voltage, V
Voltage Supply
I
DD
Active
Power-Down
(I
DD1
+ I
DD2
)
IL
IH
Min
4
−10
−10
−7
200
400
2.2
3.0
Typ
−5
−2
330
660
1000
−147
−60
−28
−12
−37
−19
3.3
30
17
Rev. 0 | Page 3 of 12
Max
18
+10
0.3
3.6
60
30
A
= T
MIN
Unit
GHz
dBm
dBm
dBm
mV p-p
mV p-p
mV p-p
dBc/Hz
dBm
dBc
dBc
dBc
dBc
V
V
V
mA
mA
to T
MAX
, unless otherwise noted. The operating temperature
Test Conditions/Comments
4 GHz to 18 GHz
Single-ended output connected into 50 Ω load
Differential outputs connected into 100 Ω
differential load
Peak-to-peak voltage swing on each single-ended
output, connected into 50 Ω load
Peak-to-peak voltage swing on differential
output, connected into 100 Ω differential load
Peak-to-peak voltage swing on each single-ended
output, no load condition
Input frequency (f
RF input power (P
CE is high
CE is low
IN
IN
) = 0 dBm, RF
) = 12 GHz, offset = 100 kHz
OUT
= 4 GHz
ADF5000

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