FM18W08-SGTR Ramtron, FM18W08-SGTR Datasheet
FM18W08-SGTR
Manufacturer Part Number
FM18W08-SGTR
Description
SOIC28 T&R
Manufacturer
Ramtron
Datasheet
1.FM18W08-SGTR.pdf
(11 pages)
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Pre-Production
FM18W08
256Kb Wide Voltage Bytewide F-RAM
Features
256Kbit Ferroelectric Nonvolatile RAM
Superior to BBSRAM Modules
Description
The FM18W08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 38 years while
eliminating
disadvantages and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing
and high write endurance make F-RAM superior to
other types of nonvolatile memory.
In-system operation of the FM18W08 is very similar
to other RAM devices. Minimum read- and write-
cycle times are equal. The F-RAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM18W08 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM18W08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs. Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change
the specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Rev. 2.1
Jan. 2012
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10
38 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Resistant to Negative Voltage Undershoots
the
reliability concerns, functional
14
) Read/Writes
SRAM & EEPROM Compatible
Low Power Operation
Industry Standard Configuration
Pin Configuration
FM18W08-SG
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns Access Time
130 ns Cycle Time
Wide Voltage Operation 2.7V to 5.5V
12 mA Active Current
20 A (typ.) Standby Current
Industrial Temperature -40 C to +85 C
28-pin “Green”/RoHS SOIC Package
DQ0
DQ1
DQ2
VSS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
1850 Ramtron Drive, Colorado Springs, CO 80921
Ordering Information
10
11
12
13
14
1
2
3
4
5
6
7
8
9
28-pin “Green” SOIC
Ramtron International Corporation
(800) 545-FRAM, (719) 481-7000
28
27
26
25
24
23
22
21
20
19
18
17
16
15
http://www.ramtron.com
VDD
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Page 1 of 11
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