25TTS08FPPBF Vishay, 25TTS08FPPBF Datasheet - Page 5

• Manufacturer Part Number: 25TTS08FPPBF
• Description: SCRs 800 Volt 25 Amp
• Manufacturer: Vishay
• Type: SCRr

Specifications of 25TTS08FPPBF

• Breakover Current Ibo Max: 350 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.25 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 45 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220
• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max, Igt: 45mA
• Current It Av: 16A
• On State Rms Current It(rms): 25A
• Peak Non Rep Surge Current Itsm 50hz: 300A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Average On-state Current: 16A
• Hold Current: 100mA
• Gate Trigger Current (max): 45mA
• Gate Trigger Voltage (max): 2V
• Peak Reverse Gate Voltage: 10V
• Package Type: TO-220 Full-Pak
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 350A
• On State Voltage(max): 1.25@16AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 94384
Revision: 27-May-08
100
0.01
0.1
10
0.1
10
0.001
0.0001
1
1
a)Recommended load line for
b)Rec ommended load line for
Rectangular gate pulse
VGD
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated d i/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
IGD
For technical questions, contact: [e-mail]
0.01
0.001
TO-220AB FULL-PAK, 25 A
1000
Fig. 8 - Thermal Impedance Z
100
Fig. 7 - On-State Voltage Drop Characteristics
10
S ingle Pulse
1
Phase Control SCR
0
Ins tanta neous On-state Voltage (V)
S quare Wave Pulse Duration (s)
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
25T T S .. S eries
1
0.1
0.01
(b)
25TTS...FPPbF High Voltage Series
2
(a)
T = 25°C
T = 125°C
J
J
25T T S .. S eries
3
thJC
0.1
1
F requenc y Limited by PG(AV)
Characteristics
4
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
25T T S .. S eries
Vishay High Power Products
S teady S tate Value
(DC Operation)
(4)
5
10
(3)
1
(2)
(1)
100
10
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