VSKT56/12 Vishay, VSKT56/12 Datasheet - Page 2

• Manufacturer Part Number: VSKT56/12
• Description: SCR Modules 1200 Volt 60 Amp 890 Amp IFSM
• Manufacturer: Vishay

Specifications of VSKT56/12

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VSK.41.., VSK.56.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
(3)
(4)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
VSK.41
VSK.56
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
Maximum continuous RMS on-state current,
as AC switch
Maximum peak, one-cycle non-repetitive
on-state or forward current
Maximum I
Maximum I
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
I
Average power = V
16.7 % x π x I
I > π x I
2
t for time t
AV
2
2
t for fusing
√t for fusing
x
= I
AV
2
< I < π x I
√t x √t
VOLTAGE
T(TO)
CODE
04
06
08
10
12
14
16
x
x I
AV
[e-mail], [e-mail],
T(AV)
For technical questions within your region, please contact one of the following:
+ r
REVERSE VOLTAGE
t
REPETITIVE PEAK
x (I
V
RRM
T(RMS)
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
, MAXIMUM
1000
1200
1400
1600
400
600
800
)
ADD-A-PAK Generation VII Power Modules
V
2
SYMBOL
V
I
I
O(RMS)
T(TO)
2
dI/dt
I
I
I
I
r
V
V
T(AV)
F(AV)
TSM
FSM
√t
or
I
t
I
I
2
TM
FM
H
L
(2)
t
(1)
(2)
180° conduction, half sine wave,
T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
T
Low level
High level
Low level
High level
I
I
T
I
T
resistive load, gate open circuit
T
TM
FM
TM
C
J
J
J
J
NON-REPETITIVE PEAK
= T
= 25 °C, from 0.67 V
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
= 85 °C
= π x I
= π x I
= π x I
REVERSE VOLTAGE
V
J
RSM
maximum
T(AV)
F(AV)
T(AV)
(3)
(3)
(4)
(4)
, MAXIMUM
1100
1300
1500
1700
500
700
900
, I
TEST CONDITIONS
V
g
I
(RMS)
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T
T
T
= 500 mA, t
J
J
J
= T
= T
= 25 °C
or
[e-mail]
J
J
DRM
maximum
maximum
RRM
RRM
,
r
< 0.5 μs, t
Sinusoidal
half wave,
initial T
T
Initial T
T
V
PEAK OFF-STATE VOLTAGE,
J
J
DRM
maximum
maximum
GATE OPEN CIRCUIT
, MAXIMUM REPETITIVE
I
(RMS)
J
J
p
=
=
> 6 μs
1000
1200
1400
1600
400
600
800
V
VSK.41 VSK.56 UNITS
Document Number: 94630
3.61
3.30
2.56
2.33
36.1
1.08
1.12
1.81
100
850
890
715
750
400
4.7
4.5
45
150
200
Revision: 17-May-10
1200
1256
1000
1056
7.20
6.57
5.10
4.56
0.91
1.02
4.27
3.77
135
400
1.7
60
72
AT 125 °C
I
RRM,
mA
15
kA
kA
A/μs
mΩ
mA
I
DRM
A
V
V
2
2
√s
s