VSKT56/12 Vishay, VSKT56/12 Datasheet - Page 8

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VSKT56/12

Manufacturer Part Number
VSKT56/12
Description
SCR Modules 1200 Volt 60 Amp 890 Amp IFSM
Manufacturer
Vishay
Datasheet

Specifications of VSKT56/12

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
VSK.41.., VSK.56.. Series
Vishay Semiconductors
www.vishay.com
8
1000
100
10
Fig. 19 - On-State Voltage Drop Characteristics
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VSK. 41 Series
Per leg
Instantaneous on-state voltage (V)
0.01
0.1
Tj = 25°C
100
Tj = 125°C
0.1
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
1
10
0.001
0.001
1
For technical questions within your region, please contact one of the following:
b)Recommended load line for
Rectangular gate pulse
a)R ecommended load line for
Steady state value
RthJC = 0.44 °C/W
RthJC = 0.35 °C/W
(DC operation)
<= 30% rated di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
VGD
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
IGD
0.01
Fig. 21 - Thermal Impedance Z
ADD-A-PAK Generation VII Power Modules
0.01
Square wave pulse duration (s)
Fig. 22 - Gate Characteristics
0.1
Instantaneous gate current (A)
VSK.
IR K.41../ .56.. S eries
(b)
(a)
1
0.1
VSK.41 Series
VSK.56 Series
Per leg
thJC
Frequency Limited by PG(AV)
Characteristics
1000
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
10
100
(4) (3)
10
Fig. 20 - On-State Voltage Drop Characteristics
DiodesEurope@vishay.com
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VSK. 56 Series
Per leg
1
Instantaneous on-state voltage (V)
(2) (1)
100
Tj = 25°C
Tj = 125°C
1000
10
Document Number: 94630
Revision: 17-May-10

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