TISP4265M3BJR-S Bourns Inc., TISP4265M3BJR-S Datasheet - Page 2

Sidacs PROTECTOR - SINGLE BIDIRECTIONAL

TISP4265M3BJR-S

Manufacturer Part Number
TISP4265M3BJR-S
Description
Sidacs PROTECTOR - SINGLE BIDIRECTIONAL
Manufacturer
Bourns Inc.
Datasheet

Specifications of TISP4265M3BJR-S

Mounting Style
SMD/SMT
Package / Case
DO-214AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TISP4265M3BJR-S
Manufacturer:
BOURNS
Quantity:
240 000
The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection
devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative
voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000
TISP4xxxH3BJ series is available.
Description (continued)
Absolute Maximum Ratings, T A = 25
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A
Repetitive peak off-state voltage, (see Note 1)
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
Junction temperature
Storage temperature range
NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures.
TISP4xxxM3BJ Overvoltage Protector Series
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K.20/21/45, K.44 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
2. Initially, the TISP4xxxM3BJ must be in thermal equilibrium with T
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
4. See Applications Information and Figure 12 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 ° C.
°
Rating
C (Unless Otherwise Noted)
J
= 25 °C.
Customers should verify actual device performance in their specific applications.
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4360
‘4395
‘4400
Symbol
di
V
I
I
T
TSM
TSP
DRM
T
T
stg
/dt
J
Specifications are subject to change without notice.
NOVEMBER 1997 - REVISED MAY 2007
-40 to +150
-65 to +150
Value
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±275
±290
±320
±300
± 58
± 65
± 75
± 90
300
300
220
120
110
100
100
100
2.1
30
32
75
50
Unit
A/µs
°C
°C
V
A
A

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