TICP206D-R-S Bourns Inc., TICP206D-R-S Datasheet
TICP206D-R-S
Manufacturer Part Number
TICP206D-R-S
Description
Sidacs 400V 2A TRIAC
Manufacturer
Bourns Inc.
Datasheet
1.TICP206D-R-S.pdf
(3 pages)
Specifications of TICP206D-R-S
Breakover Current Ibo Max
12:00 AM
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.02 mA
Forward Voltage Drop
2.2 V @ 1 A
Maximum Operating Temperature
+ 110 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
electrical characteristics at 25°C case temperature (unless otherwise noted )
† All voltages are with respect to Main Terminal 1.
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak on-state surge current half-sine-wave at (or below) 25°C case temperature (see Note 4)
Peak gate current
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
V
DRM
GT
GT
●
●
●
●
●
R O D U C T
LP with fomed leads
1.5 A RMS
Glass Passivated Wafer
400 V to 600 V Off-State Voltage
Max I
Package Options
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
5. This value applies for a maximum averaging time of 20 ms.
PARAMETER
PACKAGE
Repetitive peak off-
state current
Gate trigger
current
Gate trigger
voltage
the rate of 60 mA/°C.
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
GT
LP
of 10 mA
I N F O R M A T I O N
Tape and Reel
PACKING
V
V
V
V
V
V
V
V
V
Bulk
D
supply
supply
supply
supply
supply
supply
supply
supply
= rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
PART # SUFFIX
(None)
R
I
R
R
R
R
R
R
R
R
G
TEST CONDITIONS
L
L
L
L
L
L
L
L
= 0
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
t
t
t
t
t
t
t
t
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
TICP206M
TICP206D
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
MT2
MT1
MT2
MT1
G
G
WITH FORMED LEADS
LP PACKAGE
LP PACKAGE
(TOP VIEW)
(TOP VIEW)
SYMBOL
I
P
V
T(RMS)
I
I
T
I
TSM
TSM
G(AV)
DRM
T
GM
T
stg
C
L
MIN
SILICON TRIACS
TICP206 SERIES
TYP
-40 to +110
-40 to +125
VALUE
1
2
3
1
2
3
±0.2
400
600
230
1.5
0.3
10
12
MAX
±20
-2.5
-2.5
2.5
2.5
10
-8
-8
8
MDC2AA
MDC2AB
UNIT
UNIT
mA
µA
°C
°C
°C
W
V
V
A
A
A
A
1
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TICP206D-R-S Summary of contents
Page 1
... V = -12 V† supply V = -12 V† supply † All voltages are with respect to Main Terminal MARCH 1988 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. PART # SUFFIX (None) R RATING TICP206D TICP206M TEST CONDITIONS DRM Ω > 20 µ p( Ω > 20 µs R ...
Page 2
TICP206 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER V On-state voltage I = ± supply I Holding current H V supply V supply I Latching current L V supply ...
Page 3
HOLDING CURRENT vs CASE TEMPERATURE ± Initiating supply + - 0·1 -60 -40 - Case Temperature - °C C Figure 3. R ...