TISP3082-S Bourns Inc., TISP3082-S Datasheet

TISP3082-S

Manufacturer Part Number

TISP3082-S

Description

Sidacs PROTECTOR DUAL SYMMETRICAL

Manufacturer

Bourns Inc.

Datasheet

1.TISP3240F3DR.pdf (12 pages)

Specifications of TISP3082-S

Breakover Current Ibo Max

10 A

Off-state Leakage Current @ Vdrm Idrm

0.01 mA

Forward Voltage Drop

3 V

Mounting Style

Through Hole

Package / Case

TO-220

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

Planar Passivated Junctions

Low Off-State Current <10 µA

Rated for International Surge Wave Shapes

These high-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and

customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. Offered in five voltage variants to

meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in

both polarities. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the

device to switch. The high crowbar holding current prevents d.c. latchup as the current subsides.

These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control

and are virtually transparent to the system in normal operation.

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Insert xxx value corresponding to protection voltages of 240 through 380

Description

How To Order

TISP3xxxF3

Waveshape

Device

DEVICE

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

10/1000 µs

10/160 µs

10/700 µs

10/560 µs

2/10 µs

8/20 µs

.......................................UL Recognized Component

D, Small-outline

180

200

220

240

270

DRM

Package

GR-1089-CORE

IEC 61000-4-5

ITU-T K.20/21

FCC Part 68

Standard

240

260

290

320

380

(BO)

Tape And Reeled

175

120

TSP

Carrier

TISP3xxxF3 (HV) Overvoltage Protector Series

TISP3xxxF3DR-S

Order As

HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR

D Package (Top View)

Device Symbol

Terminals T, R and G correspond to the

alternative line designators of A, B and C

TISP3290F3,TISP3320F3,TISP3380F3

NC - No internal connection

OVERVOLTAGE PROTECTORS

TISP3240F3, TISP3260F3,

SD3XAA

Related parts for TISP3082-S

TISP3082-S Summary of contents

Page 1

Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) DEVICE V V ‘3240F3 180 240 ‘3260F3 200 260 ‘3290F3 220 290 ‘3320F3 240 320 ‘3380F3 270 380 Planar Passivated Junctions Low Off-State Current ...

Page 2

TISP3xxxF3 (HV) Overvoltage Protector Series Absolute Maximum Ratings °C (Unless Otherwise Noted) A Repetitive peak off-state voltage, 0 °C < T Non-repetitive peak on-state pulse current (see Notes 1 and 2) 1/2 (Gas tube differential transient, 1/2 ...

Page 3

TISP3xxxF3 (HV) Overvoltage Protector Series Electrical Characteristics for T and and G Terminals, T Parameter Repetitive peak off ±V DRM D state current V Breakover voltage dv/dt = ±250 V/ms, R (BO) dv/dt ≤ ...

Page 4

TISP3xxxF3 (HV) Overvoltage Protector Series Parameter Measurement Information V (BR)M V DRM - (BR) DRM V (BR) I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage-Current Characteristics for any Terminal Pair +i I TSP I TSM ...

Page 5

TISP3xxxF3 (HV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 0.1 0.01 0.001 - Junction Temperature ...

Page 6

TISP3xxxF3 (HV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals HOLDING CURRENT & BREAKDOWN CURRENT vs JUNCTION TEMPERATURE 1.0 0.9 0.8 0.7 0.6 0.5 I (BO) 0.4 0 0.2 0.1 -25 0 ...

Page 7

TISP3xxxF3 (HV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals 1000 100 10 MARCH 1994 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their ...

Page 8

TISP3xxxF3 (HV) Overvoltage Protector Series Typical Characteristics - R and T Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0·1 0·01 0·001 - Junction Temperature - °C J Figure ...

Page 9

TISP3xxxF3 (HV) Overvoltage Protector Series Thermal Information MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION Current Duration - s Figure 14. MARCH 1994 - REVISED SEPTEMBER 2008 Specifications are subject ...

Page 10

TISP3xxxF3 (HV) Overvoltage Protector Series Electrical Characteristics The electrical characteristics of a TISP ® depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimize the ...

Page 11

TISP3xxxF3 (HV) Overvoltage Protector Series Protection Voltage The protection voltage increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on (BO) the rate of current rise, di/dt, when the TISP conditions can be estimated ...

Page 12

TISP3xxxF3 (HV) Overvoltage Protector Series Longitudinal Balance Figure 17 shows a three terminal TISP ® terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T, then ...

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