VSKT91/06S90P Vishay, VSKT91/06S90P Datasheet - Page 2

• Manufacturer Part Number: VSKT91/06S90P
• Description: SCR Modules 600 Volt 95 Amp
• Manufacturer: Vishay

Specifications of VSKT91/06S90P

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Holding Current (ih Max): 250 mA
• Mounting Style: Screw
• Package / Case: ADD-A-PAK
• Breakover Current Ibo Max: 2100 A
• Gate Trigger Current (igt): 150 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
(3)
(4)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
VSK.91
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
Maximum continuous RMS on-state current,
as AC switch
Maximum peak, one-cycle non-repetitive
on-state or forward current
Maximum I
Maximum I
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
I
Average power = V
16.7 % x π x I
I > π x I
2
t for time t
AV
2
2
t for fusing
√t for fusing
x
= I
AV
2
< I < π x I
√t x √t
VOLTAGE
T(TO)
CODE
04
06
08
10
12
14
16
x
x I
AV
[e-mail], [e-mail],
T(AV)
For technical questions within your region, please contact one of the following:
+ r
REVERSE VOLTAGE
t
REPETITIVE PEAK
x (I
V
RRM
T(RMS)
, MAXIMUM
1000
1200
1400
1600
Thyristor/Diode and Thyristor/Thyristor, 95 A
400
600
800
ADD-A-PAK Generation VII Power Modules
V
)
2
SYMBOL
V
I
I
O(RMS)
T(TO)
2
dI/dt
I
I
I
I
r
V
V
T(AV)
F(AV)
TSM
FSM
√t
or
I
t
I
I
2
TM
FM
H
L
(2)
t
(1)
(2)
180° conduction, half sine wave,
T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
T
Low level
High level
Low level
High level
I
I
T
I
T
resistive load, gate open circuit
T
NON-REPETITIVE PEAK
TM
FM
TM
C
J
J
J
J
REVERSE VOLTAGE
= T
= 25 °C, from 0.67 V
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
= 85 °C
= π x I
= π x I
= π x I
V
RSM
J
maximum
, MAXIMUM
T(AV)
F(AV)
T(AV)
(3)
(3)
(4)
(4)
1100
1300
1500
1700
500
700
900
V
, I
g
TEST CONDITIONS
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T
T
T
= 500 mA, t
J
J
J
I
(RMS)
= T
= T
= 25 °C
J
J
[e-mail]
DRM
or
maximum
maximum
RRM
RRM
,
r
< 0.5 μs, t
V
PEAK OFF-STATE VOLTAGE,
DRM
Sinusoidal
half wave,
initial T
Initial T
GATE OPEN CIRCUIT
, MAXIMUM REPETITIVE
J
J
p
= T
= T
I
(RMS)
> 6 μs
1000
1200
1400
1600
J
J
400
600
800
maximum
maximum
V
Document Number: 94632
VALUES
Revision: 17-May-10
18.26
14.14
12.91
2000
2094
1682
1760
0.97
2.76
2.38
1.73
210
200
150
250
400
1.1
95
20
I
AT 125 °C
RRM,
mA
UNITS
15
kA
kA
A/μs
mΩ
mA
I
A
V
V
DRM
2
2
√s
s