VSKT91/06S90P Vishay, VSKT91/06S90P Datasheet - Page 3

• Manufacturer Part Number: VSKT91/06S90P
• Description: SCR Modules 600 Volt 95 Amp
• Manufacturer: Vishay

Specifications of VSKT91/06S90P

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Holding Current (ih Max): 250 mA
• Mounting Style: Screw
• Package / Case: ADD-A-PAK
• Breakover Current Ibo Max: 2100 A
• Gate Trigger Current (igt): 150 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
• Table shows the increment of thermal resistance R
Document Number: 94632
Revision: 17-May-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
Maximum RMS insulation voltage
Maximum critical rate of rise of off-state voltage
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.91..
180°
0.04
RRM
, V
DRM
SINE HALF WAVE CONDUCTION
[e-mail], [e-mail],
Thyristor/Diode and Thyristor/Thyristor, 95 A
ADD-A-PAK Generation VII Power Modules
For technical questions within your region, please contact one of the following:
0.048
120°
to heatsink
VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
busbar
0.063
90°
SYMBOL
SYMBOL
SYMBOL
T
R
P
- V
dV/dt
R
J
I
I
P
V
V
RRM,
V
DRM
, T
0.085
thJC
I
G(AV)
I
I
thCS
thJC
GM
GD
GT
INS
GM
GD
60°
GT
GM
Stg
when devices operate at different conduction angles than DC
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
JEDEC
T
T
T
T
T
T
T
T
T
50 Hz
T
J
J
J
J
J
J
J
J
J
J
0.125
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= 125 °C, rated V
= 125 °C, rated V
30°
= 125 °C, gate open circuit
= 125 °C, linear to 0.67 V
0.033
180°
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
RECTANGULAR WAVE CONDUCTION
DRM
DRM
[e-mail]
applied
applied
0.052
120°
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
DRM
0.067
Vishay Semiconductors
90°
0.088
60°
3000 (1 min)
- 40 to 125
3600 (1 s)
VALUES
VALUES
VALUES
TO-240AA compatible
1000
0.22
0.25
270
150
0.1
2.7
3.0
3.0
4.0
2.5
1.7
75
12
10
80
15
4
3
6
0.127
30°
www.vishay.com
UNITS
UNITS
UNITS
°C/W
V/μs
mA
Nm
mA
mA
oz.
UNITS
°C
W
A
V
V
g
V
°C/W
3