TISP61511DR Bourns Inc., TISP61511DR Datasheet - Page 4

• Manufacturer Part Number: TISP61511DR
• Description: Sidacs Dual P Gate Forward Conducting
• Manufacturer: Bourns Inc.

Specifications of TISP61511DR

• Breakover Current Ibo Max: 5 A
• Rated Repetitive Off-state Voltage Vdrm: 100 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 4 V
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Parameter Measurement Information
Characteristic
Switching
TISP61511D Gated Protectors
-v
I
(BO)
Quadrant III
V
V
(BO)
GK(BO)
V
GG
V
I
S
S
Figure 1. Voltage-Current Characteristic
V
D
I
I
FSM
FSP
(= |I
(= |I
V
T
TSM
TSP
|)
|)
I
F
+i
-i
I
I
I
I
I
D
TSP
H
T
TSM
V
F
Customers should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
Characteristic
Conduction
Forward
Quadrant I
JULY 1995 — REVISED JULY 2008
PM6XAAA
+v