NCR169D ON Semiconductor, NCR169D Datasheet - Page 2

• Manufacturer Part Number: NCR169D
• Description: SCRs 400V 800mA
• Manufacturer: ON Semiconductor

Specifications of NCR169D

• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
1. R
2. Does not include R
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance − Junction to Case
Lead Solder Temperature
Peak Repetitive Forward or
Peak Forward On−State Voltage
Gate Trigger Current (Continuous dc) (Note 2.)
Holding Current (Note 2.)
Latch Current
Gate Trigger Voltage (Continuous dc) (Note 2.)
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of On−State Current
(t1/16″ from case, 10 secs max)
Reverse Blocking Current (Note 1.)
(V
(I
(V
(V
(V
(V
(V
T
(I
GK
TM
J
PK
AK
AK
AK
AK
D
D
= 110°C)
= 1000 Ohms included in measurement.
= Rated V
= Rated V
= 20 A; Pw = 10 μsec; diG/dt = 1.0 A/μsec, Igt = 20 mA)
= 1.0 Amp Peak @ T
= 12 V, R
= 12 V, I
= 12 V, I
= 12 V, R
GT
GT
DRM
DRM
L
L
= 100 Ohms)
= 100 Ohms, I
= 0.5 mA)
= 0.5 mA, R
GK
, Exponential Waveform, R
− Junction to Ambient
and V
in measurement.
RRM
A
Characteristic
= 25°C)
GK
; R
GT
(*)
Characteristic
= 1.0 k)
GK
= 10 mA)
= 1.0 kΩ)
(T
C
= 25°C unless otherwise noted)
GK
= 1000 Ohms,
http://onsemi.com
T
T
T
T
T
T
T
T
T
NCR169D
C
C
C
C
C
C
C
C
C
= 25°C
= 110°C
= 25°C
= 25°C
= −40°C
= 25°C
= −40°C
= 25°C
= −40°C
2
I
DRM
Symbol
dV/dt
V
V
di/dt
I
GT
I
I
, I
TM
GT
H
L
RRM
Symbol
R
R
T
θJC
θJA
L
Min
20
−
−
−
−
−
−
−
−
−
−
−
Max
0.62
200
260
Typ
0.5
0.6
75
40
35
−
−
−
−
−
−
−
Max
200
0.1
1.7
5.0
0.8
1.2
10
10
10
15
50
−
°C/W
Unit
°C
Volts
Volts
Unit
V/μs
A/μs
mA
mA
mA
μA
μA