SCRs 400V 800mA

NCR169D

Manufacturer Part NumberNCR169D
DescriptionSCRs 400V 800mA
ManufacturerON Semiconductor
NCR169D datasheet
 


Specifications of NCR169D

Mounting StyleThrough HolePackage / CaseTO-92-3 (TO-226)
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
On−State Current Rating of 0.8 Amperes RMS at 80°C
Surge Current Capability − 10 Amperes
Immunity to dV/dt − 20 V/μsec Minimum at 110°C
Glass-Passivated Surface for Reliability and Uniformity
Device Marking: NCR169D, Date Code
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
J
Rating
Peak Repetitive Off−State Voltage (Note 1.)
= *40 to 110°C, Sine Wave, 50 to
(T
J
60 Hz; Gate Open)
On-State RMS Current
(T
= 80°C) 180° Conduction Angles
C
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
= 25°C)
J
Circuit Fusing Consideration (t = 10 ms)
Forward Peak Gate Power
μ
= 25°C, Pulse Width v 1.0
(T
s)
A
Forward Average Gate Power
(T
= 25°C, t = 20 ms)
A
Forward Peak Gate Current
μ
= 25°C, Pulse Width v 1.0
(T
s)
A
Reverse Peak Gate Voltage
μ
= 25°C, Pulse Width v 1.0
(T
s)
A
Operating Junction Temperature Range
@ Rate V
and V
RRM
DRM
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
Symbol
Value
Unit
V
400
Volts
DRM,
V
RRM
I
0.8
Amp
T(RMS)
I
10
Amps
TSM
2
2
I
t
0.415
A
s
P
0.1
Watt
GM
P
0.10
Watt
G(AV)
I
1.0
Amp
GM
V
5.0
Volts
GRM
°C
T
−40 to
J
110
°C
T
−40 to
stg
150
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
http://onsemi.com
SCR
0.8 AMPERES RMS
400 VOLTS
G
A
K
MARKING
DIAGRAM
NCR
169D
ALYWWG
G
K
G
A
TO−92
(TO−226AA)
CASE 029
STYLE 10
1 2 3
A
= Assembly Location
L
= Wafer Lot
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
ORDERING INFORMATION
Publication Order Number:
NCR169D/D

NCR169D Summary of contents

  • Page 1

    ... Surge Current Capability − 10 Amperes • Immunity to dV/dt − 20 V/μsec Minimum at 110°C • Glass-Passivated Surface for Reliability and Uniformity • Device Marking: NCR169D, Date Code • Pb−Free Packages are Available MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Rating Peak Repetitive Off− ...

  • Page 2

    ... Critical Rate of Rise of On−State Current = μsec; diG/dt = 1.0 A/μsec, Igt = 20 mA *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1 1000 Ohms included in measurement Does not include R in measurement. GK NCR169D (T = 25°C unless otherwise noted) C Symbol I DRM T = 25° 110° ...

  • Page 3

    ... Holding Current H 100 −40 −25 − JUNCTION TEMPERATURE (°C) J Figure 1. Typical Gate Trigger Current versus Junction Temperature NCR169D on state RRM RRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 110 −40 − ...

  • Page 4

    ... Figure 3. Typical Holding Current versus Junction Temperature 120 110 100 30° 60° 0.1 0.2 0 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 5. Typical RMS Current Derating NCR169D 1000 100 110 −40 −25 − Figure 4. Typical Latching Current versus 10 MAXIMUM @ 180° 90° 120° ...

  • Page 5

    ... Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive more than 1 consecutive missing component is permitted tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. NCR169D H2A H2A W2 ...

  • Page 6

    ... NCR169DRLRM Flat side of TO92 and adhesive tape visible NCR169DRLRMG Flat side of TO92 and adhesive tape visible NCR169DRLRP Flat side of TO92 and adhesive tape visible NCR169DRLRPG Flat side of TO92 and adhesive tape visible †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

  • Page 7

    ... PACKAGE DIMENSIONS SEATING K PLANE NCR169D TO−92 (TO−226AA) CASE 029−11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM SECTION X−X STYLE 10: http://onsemi.com ...

  • Page 8

    ... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NCR169D/D ...