TISP2290L Bourns Inc., TISP2290L Datasheet - Page 11

• Manufacturer Part Number: TISP2290L
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP2290L

• Breakover Current Ibo Max: 10 A
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: SOT-82
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The protection voltage, (V
the rate of current rise, di/dt, when the TISP
tions can be estimated by multiplying the 50 Hz rate V
estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt
is higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional
series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the
TISP
Off-state Capacitance
The off-state capacitance of a TISP
age, V
25 °C variation of capacitance value with a.c. bias is shown in Figure 21. When V
value of V
Protection Voltage
Capacitance
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
¤
TISP1xxxF3 Overvoltage Protector Series
D
device breakdown region.
, and the a.c. voltage, V
d
. The capacitance is essentially constant over the range of normal telecommunication frequencies.
(BO)
), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on
d
. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical
¤
device is sensitive to junction temperature, T
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
1
¤
device is clamping the voltage in its breakdown region. The V
Normalized to V
DC Bias, V
APPLICATIONS INFORMATION
NORMALIZED CAPACITANCE
V
(BO)
d
RMS AC TEST VOLTAGE
- RMS AC Test Voltage - mV
D
(250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 8.). An
= 0
10
d
Figure 20.
= 100 mV
vs
100
D
J
>> V
, and the bias voltage, comprising of the d.c. volt-
d
, the capacitance value is independent on the
AIXXAA
1000
(BO)
value under surge condi-