BTA216B-800B /T3 NXP Semiconductors, BTA216B-800B /T3 Datasheet - Page 3

• Manufacturer Part Number: BTA216B-800B /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA216B-800B /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA216B-800B,118

Philips Semiconductors
October 1997
Triacs
high commutation
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
25
20
15
10
1000
150
100
on-state current I
5
0
100
50
10
0
0
Ptot / W
10us
1
ITSM / A
ITSM / A
dI /dt limit
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T
100us
5
1
T(RMS)
TSM
Number of cycles at 50Hz
10
TSM
, versus number of cycles, for
IT(RMS) / A
, where
, versus pulse width t
BT139
BTA216
BT139
10
1ms
T / s
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
p
= conduction angle.
100
20ms.
10ms
T
T
15
Tmb(max) / C
tot
120
90
60
30
= 180
, versus rms
I TSM
I TSM
time
time
p
100ms
, for
20
1000
95
101
107
113
119
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
20
15
10
Fig.4. Maximum permissible rms current I
GT
5
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
50
40
30
20
10
IT(RMS) / A
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT139
BT139
BT136
Tj / C
Tmb / C
50
50
BTA216B series B
mb
Product specification
1
100
99˚C.
100
99 C
mb
Rev 1.100
T(RMS)
.
150
10
150
,
j
.