BTA216B NXP Semiconductors, BTA216B Datasheet

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BTA216B

Manufacturer Part Number
BTA216B
Description
Triacs High Commutation
Manufacturer
NXP Semiconductors
Datasheet
1.BTA216B.pdf (6 pages)

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Philips Semiconductors
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope suitable
for surface mounting, intended for use
in circuits where high static and
dynamic dV/dt and high dI/dt can
occur. These devices will commutate
the full rated rms current at the
maximum rated junction temperature,
without the aid of a snubber.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
October 1997
Triacs
high commutation
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
t
stg
j
mb
DRM
GM
GM
G(AV)
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave;
T
full sine wave;
T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms
period
TM
SYMBOL
V
I
I
mb
j
T(RMS)
TSM
G
= 25 ˚C prior to
DRM
/dt = 0.2 A/ s
= 20 A; I
99 ˚C
1
2
G
voltages
current
3
PARAMETER
Repetitive peak off-state
RMS on-state current
Non-repetitive peak on-state
= 0.2 A;
1
mb
MIN.
-40
-
-
-
-
-
-
-
-
-
-
BTA216B-
-500
500
1
SYMBOL
T2
MAX. MAX. MAX. UNIT
500B
MAX.
-600
600
500
140
140
150
100
150
125
0.5
BTA216B series B
16
16
98
2
5
5
1
Product specification
600B
600
140
16
-800
800
800B
800
140
16
Rev 1.100
UNIT
A/ s
A
G
˚C
˚C
W
W
V
A
A
A
A
V
T1
2
V
A
A
s

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BTA216B Summary of contents

Page 1

... 0 / over any period - Product specification BTA216B series B MAX. MAX. MAX. UNIT 500B 600B 800B 500 600 800 140 140 140 SYMBOL T2 MAX. UNIT -500 -600 -800 1 1 500 ...

Page 2

... DRM(max) j exponential waveform; gate open circuit V = 400 125 ˚ T(RMS) without snubber; gate open circuit 0 DRM(max / Product specification BTA216B series B MIN. TYP. MAX. UNIT - - 1.2 K 1.7 K K/W MIN. TYP. MAX. UNIT ...

Page 3

... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 100 1000 - Product specification BTA216B series B BT139 100 Tmb / C BT139 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 99˚C. mb VGT(Tj) BT136 0 50 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...

Page 4

... Fig.11. Transient thermal impedance dIcom/dt (A/ms) 1000 100 100 150 ( (25˚C), Fig.12. Typical, critical rate of change of commutating current Product specification BTA216B series B BT139 typ max 0.5 1 1 BT139 unidirectional bidirectional 0.1ms 1ms 10ms 0.1s 1s 10s versus ...

Page 5

... Epoxy meets UL94 V0 at 1/8". MOUNTING INSTRUCTIONS Dimensions in mm Notes 1. Plastic meets UL94 V0 at 1/8". October 1997 10.3 max 11 max 15.4 0.85 max (x2) Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting . 5 Product specification BTA216B series B 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.100 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 BTA216B series B 6 Product specification Rev 1.100 ...

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